Achieving 0.05 Ω-mm contact resistance in non-alloyed Ti/Au ohmics to -GaO by removing surface carbon.

Preserving a contamination-free metal-semiconductor interface in -GaO is critical to achieve consistently low resistance ( 1 Ω-mm) ohmic contacts. Here, we report a scanning transmission electron microscopy study on the variation in Ti/Au ohmic contact quality to (010) -GaO in a conventional lift-off vs a metal-first process. We observe a thin ∼1 nm carbon barrier between the Ti and GaO in a non-conductive contact fabricated by a conventional lift-off process, which we attribute to photoresist residue, not previously detected by x-ray photoelectron spectroscopy due to the thinness and patchy coverage of the carbon layer, as well as roughness of the GaO surface. This thin carbon barrier is confirmed by electron energy loss spectroscopy and atomic force microscopy-infrared spectroscopy. We believe that the presence of the thin and patchy carbon layer leads to the highly inconsistent contact behavior in previous reports on non-alloyed contacts. Adventitious carbon is also observed in a conductive ohmic contact metal-first processing on an as-grown sample. We find that a five minute active oxygen descum is sufficient to remove this carbon on as-grown samples, further improving the ohmic behavior and reducing the contact resistance R to 0.06 Ω-mm. We also show that an hour long UV-ozone treatment of the GaO surface can eliminate carbon residue from the lift-off processing, resulting in a low R of 0.05 Ω-mm.