Liu Shuning, Wu Jinqi, Chen Yani, Zhang Ting, Tong Lifen, Liu Xiaobo
School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China.
Polymers (Basel). 2025 Jun 11;17(12):1623. doi: 10.3390/polym17121623.
Highly heat-resistant and low-dielectric materials are crucial for achieving high-frequency communication, high-density integration, and high-temperature stability in modern electronics. In this work, surface modification of hollow silica microspheres (HGMs) using a silane coupling agent ((3-aminopropyl)triethoxysilane, KH550) yielded KHGM particles with a coating content of approximately 9.3 wt%, which were subsequently incorporated into high-performance polyarylene ether nitrile (PEN) polymers to fabricate composite films. The modified nanoparticles demonstrated significantly enhanced compatibility with the polymer matrix, while their hollow structure effectively reduced the dielectric constant of the composite film. When loaded with 50 wt% KHGM particles, the PEN-based composite film exhibited an elevated glass transition temperature of 198 °C and achieved a dielectric constant as low as 2.32 at 1 MHz frequency, coupled with dielectric loss below 0.016; compared with pure PEN, the dielectric constant of PEN/KHGM-50% decreased by 26.47%. Additionally, the composite demonstrated excellent water repellency. These advancements provide high-performance material support for applications in electronic communications, aerospace, and related fields.
高耐热性和低介电材料对于实现现代电子学中的高频通信、高密度集成和高温稳定性至关重要。在这项工作中，使用硅烷偶联剂（（3-氨丙基）三乙氧基硅烷，KH550）对中空二氧化硅微球（HGMs）进行表面改性，得到了涂层含量约为9.3 wt%的KHGM颗粒，随后将其掺入高性能聚亚芳基醚腈（PEN）聚合物中以制备复合薄膜。改性后的纳米颗粒与聚合物基体的相容性显著增强，同时其空心结构有效降低了复合薄膜的介电常数。当负载50 wt%的KHGM颗粒时，基于PEN的复合薄膜表现出198 °C的升高玻璃化转变温度，在1 MHz频率下介电常数低至2.32，介电损耗低于0.016；与纯PEN相比，PEN/KHGM-50%的介电常数降低了26.47%。此外，该复合材料表现出优异的疏水性。这些进展为电子通信、航空航天及相关领域的应用提供了高性能材料支持。
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