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用于光电器件的新型邻三联苯发光体:合成、光物理、电化学和热分析。

Novel o-Terphenyl Luminophores for Optoelectronic Devices: Synthesis, Photophysical, Electrochemical, and Thermal Analysis.

作者信息

Mainak Amarsinh R, Kewate Pranjali S, Shabade Vasanti B, Kutwade Vishnu V, Tigote Radhakrishnan M, Desai Netaji K, Pujari Sidram R

机构信息

Department of Chemistry, D. B. F. Dayanand College of Arts and Science, Solapur, Maharashtra, 413002, India.

Prof. Ramkrishna More Arts, Commerce and Science College Akurdi, Pune, Maharashtra, 411044, India.

出版信息

J Fluoresc. 2025 Jun 28. doi: 10.1007/s10895-025-04420-w.

DOI:10.1007/s10895-025-04420-w
PMID:40580355
Abstract

Using the conventional solid-state reaction method, a new class of o-terphenyl (o-Th) luminophores infused with different concentrations of anthracene (AN) was created in order to study new luminophores that emit at longer wavelengths. We analyzed their optical and electrochemical characteristics using spectrofluorimetry and cyclic voltammetry. Anthracene like emission was observed in the fluorescence spectrum of AN-doped o-Th luminophors. The peaks observed at 420, 442 and 470 nm in all luminophors. These new peaks are attributed due to excitation energy transfer from o-Th to anthracene. The synthesized luminophore's Highest Occupied Molecular Orbital (HOMO) and Lowest Unoccupied Molecular Orbital (LUMO) energy levels ranged from 5.87 eV and - 4.67 eV, respectively. Through TGA analysis, thermal stability was assessed. The homogeneous material's synthesis and crystallinity was validated by the XRD. The morphology of the prepared luminophors was confirmed by scanning electron microscopy (SEM). This comprehensive analysis suggests that these synthesized violet-indigo fluorescent luminophores have potential for use in optoelectronic devices.

摘要

采用传统的固态反应法,制备了一类注入不同浓度蒽(AN)的新型邻三联苯(o-Th)发光体,以研究发射更长波长光的新型发光体。我们使用荧光光谱法和循环伏安法分析了它们的光学和电化学特性。在掺AN的o-Th发光体的荧光光谱中观察到类似蒽的发射。在所有发光体中,在420、442和470 nm处观察到峰值。这些新峰值归因于从o-Th到蒽的激发能量转移。合成发光体的最高占据分子轨道(HOMO)和最低未占据分子轨道(LUMO)能级分别为5.87 eV和 -4.67 eV。通过热重分析(TGA)评估了热稳定性。通过X射线衍射(XRD)验证了均质材料的合成和结晶度。通过扫描电子显微镜(SEM)确认了所制备发光体的形态。这种综合分析表明,这些合成的紫靛色荧光发光体在光电器件中具有应用潜力。

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本文引用的文献

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Fabrication and Characterization of Anthracene Doped P-terphenyl Thin Films By Spin Coating Technique; Investigation of Fluorescence Properties.通过旋涂技术制备并表征蒽掺杂对联三苯薄膜;研究荧光特性。
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Synthesis of Novel Blue and Green Light Emitting 4-Nitrophenol Luminophors for Optoelectronics.新型蓝色和绿色发光 4-硝基苯酚光致发光体的合成及其在光电子学中的应用。
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Synthesis of Highly Fluorescent D-A Based p-Terphenyl Luminophors and their Thin Films for Optoelectronic Applications.
基于 D-A 的高荧光对三联苯发光体的合成及其用于光电应用的薄膜。
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