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TiNbTaN中熵氮化物在高压下10K时出现常压超导及具有稳健的转变温度

Ambient-Pressure Superconductivity Onset at 10 K and Robust T under High Pressure in TiNbTaN Medium-Entropy Nitride.

作者信息

Zeng Lingyong, Wang Jie, Liu Hongyu, Li Longfu, Qin Jinjun, Li Yucheng, Chen Rui, Song Jing, Hou Yusheng, Luo Huixia

机构信息

School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Key Lab of Polymer Composite & Functional Materials, Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Sun Yat-sen University, Guangzhou, 510275, China.

Device Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, Groningen, 9747 AG, The Netherlands.

出版信息

Adv Sci (Weinh). 2025 Aug;12(32):e06089. doi: 10.1002/advs.202506089. Epub 2025 Jun 29.

Abstract

Superconductivity has been one of the focal points in medium- and high-entropy alloys (MEAs-HEAs) since the first discovery of the HEA superconductor in 2014. Until now, most HEAs' superconducting transition temperature (T) has not exceeded 10 K. Here, the first observation of superconductivity in a bulk medium-entropy nitride (MEN), TiNbTaN, which shows a T of 10 K at ambient pressure, is reported. Notably, the electronic specific heat coefficient γ(H) exhibits nonlinear H-dependence behavior, which is similar to other well-studied multigap superconductors. Furthermore, TiNbTaN₃ exhibits extraordinary pressure resilience, maintaining robust superconductivity under high-pressure conditions. Density functional theory (DFT) calculations indicate that pressure exerts a negligible impact on the electronic structures of TiNbTaN, thereby corroborating the experimental observations. These findings not only advance the understanding of emergent phenomena in entropy-stabilized nitrides but also establish a new material platform for finding more high-T superconductors with combinations of 4d/5d transition metal elements and light elements, motivating further investigations into high-entropy functional ceramics for extreme environment applications.

摘要

自2014年首次发现高熵合金(MEAs-HEAs)超导体以来,超导性一直是中高熵合金的焦点之一。到目前为止,大多数高熵合金的超导转变温度(T)尚未超过10K。在此,报道了在块状中熵氮化物(MEN)TiNbTaN中首次观察到超导性,其在环境压力下的T为10K。值得注意的是,电子比热系数γ(H)表现出非线性的H依赖行为,这与其他经过充分研究的多能隙超导体相似。此外,TiNbTaN₃表现出非凡的压力韧性,在高压条件下保持强大的超导性。密度泛函理论(DFT)计算表明,压力对TiNbTaN的电子结构影响可忽略不计,从而证实了实验观察结果。这些发现不仅推进了对熵稳定氮化物中涌现现象的理解,还建立了一个新的材料平台,用于寻找更多具有4d/5d过渡金属元素和轻元素组合的高T超导体,激发了对用于极端环境应用的高熵功能陶瓷的进一步研究。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a040/12407338/da9872b093e4/ADVS-12-e06089-g002.jpg

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