Kim Hyo Han, Kim Da Hee, Choi Bo Gyu, Kim Do Hoon, Oh Si Duck, Shin Dong Hee, Lee Hosun
Department of Materials Science & Engineering, Inha University, Incheon 22212, Republic of Korea.
Department of Applied Physics, Kyung Hee University, Yongin 17104, Republic of Korea.
Nanotechnology. 2025 Jul 8;36(27). doi: 10.1088/1361-6528/ade9cc.
High-performance self-powered photodetectors (PDs) have attracted significant interest as highly efficient optoelectronic devices capable of operating without an external power source. In this study, we demonstrate a flexible MoS/graphene quantum dots (GQDs)/LaVOheterojunction PD fabricated on a polyethylene terephthalate substrate. The device performance was systematically evaluated with and without the GQDs interlayer. The incorporation of GQDs effectively suppresses charge recombination, leading to substantial improvements in key performance metrics such as responsivity, external quantum efficiency, and detectivity. Furthermore, the MoS/GQDs/LaVOPD exhibited excellent mechanical stability, maintaining stable photocurrent and dark current levels even after 3000 continuous bending cycles. These results highlight the potential of the MoS/GQDs/LaVOPD as a highly promising candidate for next-generation flexible optoelectronic applications.
高性能自供电光电探测器（PDs）作为能够在无外部电源情况下运行的高效光电器件，已引起了广泛关注。在本研究中，我们展示了一种在聚对苯二甲酸乙二醇酯衬底上制备的柔性MoS/石墨烯量子点（GQDs）/LaVO异质结光电探测器。在有和没有GQDs中间层的情况下，对器件性能进行了系统评估。GQDs的引入有效地抑制了电荷复合，导致诸如响应度、外量子效率和探测率等关键性能指标有了显著提高。此外，MoS/GQDs/LaVO光电探测器表现出优异的机械稳定性，即使经过3000次连续弯曲循环后，仍能保持稳定的光电流和暗电流水平。这些结果突出了MoS/GQDs/LaVO光电探测器作为下一代柔性光电子应用极具潜力候选者的潜力。
