Shokouhi Samad, Saadatmand Seyedeh Bita, Ahmadi Vahid, Arabpour Roghabadi Farzaneh
Faculty of Electrical and Computer Engineering, Tarbiat Modares University, Tehran, Iran.
Faculty of Chemical Engineering, Tarbiat Modares University, Tehran, Iran.
Sci Rep. 2025 Jul 1;15(1):20707. doi: 10.1038/s41598-025-00342-6.
We investigate the opto-electro-mechanical characteristics and stability of Ruddlesden-Popper X-FPEAPbI perovskites, where X represents para (p), meso (m), and ortho (o) configurations. The findings reveal that the transition from para to meso and ortho configurations results in a progressive increase in the bandgap, with values of 2.097 eV, 2.133 eV, and 2.177 eV, respectively. Notably, p-FPEAPbI exhibits superior stability, characterized by an enhanced formation energy of - 4.825 eV, compared to m-FPEAPbI (- 4.647 eV) and o-FPEAPbI (- 4.581 eV). Thus, p-FPEAPbI emerges as a leading candidate for the active layer in perovskite light-emitting diodes (PeLEDs). Internal quantum efficiencies of 6.289% for PEAPbI and 2.285% for p-FPEAPbI have been achieved, both of which are higher than those of MAPbI. In contrast, the dependence of efficiency on temperature fluctuations for p-FPEAPbI is 0.01 1/K, compared to PEAPbI's 0.0282 1/K, highlighting its enhanced stability under temperature changes. Furthermore, the stability of the emission spectrum against temperature fluctuations for p-FPEAPbI, with a value of 0.0156 nm/K, is greater than that of PEAPbI, which has a value of 0.0245 nm/K. Although the efficiency of PeLEDs utilizing p-FPEAPbI is somewhat lower than that of PEAPbI, its superior stability makes it a compelling choice for future applications, paving the way for more reliable and durable light-emitting devices.
我们研究了Ruddlesden-Popper X-FPEAPbI钙钛矿的光电机械特性和稳定性,其中X代表对位(p)、间位(m)和邻位(o)构型。研究结果表明,从对位到间位和邻位构型的转变导致带隙逐渐增加,其值分别为2.097 eV、2.133 eV和2.177 eV。值得注意的是,与间位FPEAPbI(-4.647 eV)和邻位FPEAPbI(-4.581 eV)相比,对位FPEAPbI表现出卓越的稳定性,其形成能增强至-4.825 eV。因此,对位FPEAPbI成为钙钛矿发光二极管(PeLEDs)有源层的主要候选材料。PEAPbI的内量子效率为6.289%,对位FPEAPbI的内量子效率为2.285%,两者均高于MAPbI。相比之下,对位FPEAPbI的效率对温度波动的依赖性为0.01 1/K,而PEAPbI为0.0282 1/K,这突出了其在温度变化下增强的稳定性。此外,对位FPEAPbI发射光谱对温度波动的稳定性值为0.0156 nm/K,大于PEAPbI的0.0245 nm/K。尽管使用对位FPEAPbI的PeLEDs效率略低于PEAPbI,但其卓越的稳定性使其成为未来应用的有吸引力的选择,为更可靠、耐用的发光器件铺平了道路。