Shahnooshi Farzaneh, Orouji Ali A
Faculty of Electrical and Computer Engineering, Semnan University, Semnan, Iran.
Sci Rep. 2025 Jul 1;15(1):21520. doi: 10.1038/s41598-025-07080-9.
Heterojunction Schottky solar cells based on gallium arsenide (GaAs) are prominent in photovoltaic research due to their remarkable properties. However, these solar cells face several challenges, such as surface reflection, reduced generation of electron-hole pairs, and insufficient light absorption persist. This work explores, for the first time, the structural, optical, and electrical properties of graphene (Gr)/AlGaAs/n-GaAs solar cells by optimizing front surface texturing, incorporating a back surface field (BSF) layer, and further enhancing performance through BSF layer texturing. The first feature of the proposed structure (Prop-Str) is a nano/micro-textured surface to enhance light management in Gr/AlGaAs/n-GaAs heterojunction Schottky solar cells. The results show that a textured surface with a period width of 1 μm and a depth of 600 nm achieves a short-circuit current density (J) of 23.51 mA/cm, an open-circuit voltage (V) of 0.97 V, and a power conversion efficiency (PCE) of 19.99%. The n-InAlGaP BSF layer is added on the back surface as the second feature of the Prop-Str that increases the PCE by 3% due to a strong electric field in the n-GaAs/n-InAlGaP heterojunction. The third characteristic of the Prop-Str enhances performance by texturing the BSF layer, improving internal reflection and light trapping. This modification significantly boosts light scattering and low-energy photon absorption, leading to higher J and V. Ultimately, the Prop-Str achieves a PCE of 25.37%. These findings underscore the effectiveness of front surface texturing and BSF layer optimization in achieving high-performance and cost-effective ultrathin GaAs solar cells.
基于砷化镓（GaAs）的异质结肖特基太阳能电池因其卓越性能在光伏研究中备受瞩目。然而，这些太阳能电池面临诸多挑战，如表面反射、电子 - 空穴对生成减少以及光吸收不足等问题依然存在。本工作首次通过优化前表面纹理、引入背表面场（BSF）层并对BSF层进行纹理化进一步提升性能，探索了石墨烯（Gr）/AlGaAs/n - GaAs太阳能电池的结构、光学和电学性质。所提出结构（Prop - Str）的第一个特点是具有纳米/微纹理表面，以增强Gr/AlGaAs/n - GaAs异质结肖特基太阳能电池中的光管理。结果表明，周期宽度为1μm、深度为600nm的纹理表面实现了23.51mA/cm的短路电流密度（J）、0.97V的开路电压（V）以及19.99%的功率转换效率（PCE）。在背面添加n - InAlGaP BSF层是Prop - Str的第二个特点，由于n - GaAs/n - InAlGaP异质结中的强电场，使PCE提高了3%。Prop - Str的第三个特性是通过对BSF层进行纹理化来提高性能，改善内部反射和光捕获。这种改进显著增强了光散射和低能光子吸收，从而提高了J和V。最终，Prop - Str实现了25.37%的PCE。这些发现强调了前表面纹理化和BSF层优化在实现高性能且经济高效的超薄GaAs太阳能电池方面的有效性。
