Adel Aly Mohammed, Enakerakpor Emmanuel Oghenevo, Masenda Hilary, Koch Martin
Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg 35032 Marburg Germany
Department of Physics, Faculty of Science, Ain Shams University 11566 Cairo Egypt.
Nanoscale Adv. 2025 Jul 25. doi: 10.1039/d4na00786g.
In this paper, we study the excitonic linewidths and peak energies in two transition metal dichalcogenide heterostructures of MoWSe and its binary counterparts, MoSe and WSe. We observe spectra composed of several individual excitonic transitions in temperature-dependent photoluminescence measurements. Among these are transitions of neutral excitons and trions from the binary layers and the interlayer excitons from the heterostructures. The luminescence linewidth of the interlayer excitons is significantly broader than the linewidths of the excitonic transitions from the binary layers. We attribute this additional line broadening to dielectric disorder caused by spatial inhomogeneity at the interface.
在本文中，我们研究了MoWSe及其二元对应物MoSe和WSe这两种过渡金属二卤化物异质结构中的激子线宽和峰值能量。在温度相关的光致发光测量中，我们观察到由几个单独的激子跃迁组成的光谱。其中包括来自二元层的中性激子和三重子的跃迁以及来自异质结构的层间激子的跃迁。层间激子的发光线宽明显宽于二元层激子跃迁的线宽。我们将这种额外的线宽展归因于界面处空间不均匀性引起的介电无序。
