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WSe₂/CrCl₃异质结构中电荷转移与磁近邻效应之间的相互作用

Interplay between charge transfer and magnetic proximity effects in WSe/CrCl heterostructures.

作者信息

Kipczak Łucja, Chen Zhaolong, Grzeszczyk Magdalena, Grebenchuk Sergey, Huang Pengru, Vaklinova Kristina, Watanabe Kenji, Taniguchi Takashi, Babiński Adam, Koperski Maciej, Molas Maciej R

机构信息

Institute of Experimental Physics, Faculty of Physics, University of Warsaw, 02-093 Warsaw, Poland.

School of Advanced Materials, Shenzen Graduate School, Peking University, 518055 Shenzen, China.

出版信息

Nanoscale Horiz. 2025 Aug 1. doi: 10.1039/d5nh00198f.

Abstract

Ferromagnetism in van der Waals systems with diverse spin arrangements opened a pathway to use proximity magnetic fields to activate the properties of materials that would otherwise require external stimuli. Herein, we demonstrate this concept by creating heterostructures comprising a bulk CrCl antiferromagnet with in-plane easy-axis magnetization and a monolayer (ML) WSe semiconductor. Photoluminescence and magnetic force microscopy techniques were performed to reveal the interaction between the relevant layers in the WSe/CrCl heterostructures (HSs). The quenching of the WSe emission is apparent in the WSe/CrCl HSs due to an efficient charge transfer process enabled by the relative band alignment within the structures. Moreover, we demonstrate that at specific spatial locations in the structures, the magnetic proximity effect between the WSe ML and the CrCl bulk activates dark exciton emission within the WSe ML. The dark exciton emission in the WSe ML survives to a higher temperature than the intraplane Curie temperature () of the CrCl because of its elevated in the strained regions of the CrCl layer. Our findings are relevant to the development of spintronics and valleytronics with long-lived dark states on technological timescales, as well as to sensing applications of local magnetic fields realized simultaneously in multiple dimensions.

摘要

具有不同自旋排列的范德华系统中的铁磁性为利用近场磁场激活材料特性开辟了一条途径,否则这些特性需要外部刺激。在此,我们通过创建由具有面内易轴磁化的块状CrCl反铁磁体和单层(ML)WSe半导体组成的异质结构来证明这一概念。进行了光致发光和磁力显微镜技术,以揭示WSe/CrCl异质结构(HSs)中相关层之间的相互作用。由于结构内相对能带排列实现的有效电荷转移过程,WSe/CrCl HSs中WSe发射的猝灭很明显。此外,我们证明,在结构中的特定空间位置,WSe ML和CrCl块体之间的磁近邻效应激活了WSe ML内的暗激子发射。由于CrCl层应变区域中其能量升高,WSe ML中的暗激子发射在比CrCl的面内居里温度()更高的温度下仍然存在。我们的发现与在技术时间尺度上具有长寿命暗态的自旋电子学和谷电子学的发展相关,也与在多个维度上同时实现的局部磁场传感应用相关。

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