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用于铁电忆阻器的具有独立可控传导的超高密度嵌套极性纳米涡旋

Ultrahigh-density nested polar nanovortices with independently controllable conduction for ferroelectric memristor.

作者信息

Taazayet Wael Ben, Wang Jing, Zhang Yixuan, Qu Shuangquan, Yang Huayu, Fan Yuanyuan, Han Haojie, Ma Jing, Shao Ruiwen, Huang Houbing, Nan Ce-Wen

机构信息

Advanced Research Institute of Multidisciplinary Science, and School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China.

Division of Atmosphere and Aerospace Information Technology, Beijing Institute of Technology, Zhuhai 519088, China.

出版信息

Sci Adv. 2025 Aug;11(31):eadx0372. doi: 10.1126/sciadv.adx0372. Epub 2025 Aug 1.

Abstract

Ferroelectric vortices have received much attention in the past decade due to their functionalities and potential applications in nanoelectronics. However, most of the vortices fabricated in the nanoislands have a size of more than a hundred nanometers, which limits the miniaturization of electronic devices. Here, we show the realization of a high-density vortex lattice with 10- to 20-nanometer size in ultrathin bismuth ferrite/barium titanate bilayer by strain engineering. The obtained vortex shows a nested structure, e.g., an outer center-type structure with a nested inner ring included, which is well supported by piezoelectric force microscopy, transmission electron microscopy, and phase-field simulations. The nested vortex structure is not only more stable than the center-type vortex structure but also exhibits controllable multistate conduction with low energy consumption (<100 zeptojoules, e.g., 10 joules), good stability (>1 year), and high endurance. This is of great interest for high-density [2 terabits per square inch (3100 terabits per square meter)] ferroelectric memristor conception for neuromorphic computing.

摘要

在过去十年中,铁电涡旋因其在纳米电子学中的功能和潜在应用而备受关注。然而,在纳米岛中制造的大多数涡旋尺寸超过一百纳米,这限制了电子设备的小型化。在此,我们展示了通过应变工程在超薄铋铁氧体/钛酸钡双层中实现了尺寸约为10至20纳米的高密度涡旋晶格。所获得的涡旋呈现出嵌套结构,例如,具有包含嵌套内环的外部中心型结构,这得到了压电力显微镜、透射电子显微镜和相场模拟的有力支持。嵌套涡旋结构不仅比中心型涡旋结构更稳定,而且还表现出具有低能耗(<100zeptojoules,例如10焦耳)、良好稳定性(>1年)和高耐久性的可控多态传导。这对于用于神经形态计算的高密度[约每平方英寸2太比特(每平方米3100太比特)]铁电忆阻器概念具有极大的吸引力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8945/12315967/663e9997c08c/sciadv.adx0372-f1.jpg

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