Cao Long-Xue, Shen Yang, Zhang Kai, Su Zhen-Huang, Feng Shi-Chi, Hu Xin-Mei, Zhang Yu-Hang, Wang Bing-Feng, Li Ying-Ying, Gao Xingyu, Wang Wen-Jun, Kera Satoshi, Ueno Nobuo, Li Yan-Qing, Tang Jian-Xin
Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China.
Macao Institute of Materials Science and Engineering (MIMSE), Faculty of Innovation Engineering, Macau University of Science and Technology, Taipa, Macao, 999078, China.
Angew Chem Int Ed Engl. 2025 Sep 22;64(39):e202513617. doi: 10.1002/anie.202513617. Epub 2025 Aug 7.
The development of blue perovskite light-emitting diodes (PeLEDs) is critical for advancing next-generation display technologies. However, the fabrication of high-quality mixed-halide blue perovskites remains challenging due to their intrinsic vulnerability to high defect densities, ion migration, and inefficient charge transport. To address this, we introduce a rapid in situ interface reaction at the buried interface between the perovskite layer and the underlying poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) film. This engineered interface reaction represents a novel method for preparing high-quality deep-blue CsPb(Br/Cl) films. By incorporating lithium salicylate (SAL) as a reaction initiator into the perovskite precursor, a proton exchange is triggered between PEDOT:PSS and SAL, resulting in the formation of a multifunctional PSS-Li interfacial layer. This layer modulates perovskite nucleation and growth, producing compact, uniform, and small-grained deep-blue perovskite films with reduced trap densities and enhanced quantum confinement. Combined with optimized charge dynamics, the resulting spectrally stable deep-blue PeLEDs achieve a record external quantum efficiency of 16.3% at 468 nm. This approach facilitates the successful integration of uniform and high-clarity active-matrix displays on thin-film transistor circuit substrates.
蓝色钙钛矿发光二极管（PeLEDs）的发展对于推动下一代显示技术至关重要。然而，高质量混合卤化物蓝色钙钛矿的制备仍然具有挑战性，因为它们固有地容易受到高缺陷密度、离子迁移和低效电荷传输的影响。为了解决这个问题，我们在钙钛矿层与底层聚（3,4-乙撑二氧噻吩）：聚苯乙烯磺酸盐（PEDOT:PSS）薄膜之间的掩埋界面处引入了快速原位界面反应。这种设计的界面反应代表了一种制备高质量深蓝色CsPb(Br/Cl)薄膜的新方法。通过将水杨酸锂（SAL）作为反应引发剂掺入钙钛矿前驱体中，PEDOT:PSS与SAL之间引发质子交换，从而形成多功能PSS-Li界面层。该层调节钙钛矿的成核和生长，产生致密、均匀且晶粒小的深蓝色钙钛矿薄膜，陷阱密度降低且量子限域增强。结合优化的电荷动力学，所得的光谱稳定的深蓝色PeLEDs在468nm处实现了16.3%的创纪录外量子效率。这种方法有助于在薄膜晶体管电路基板上成功集成均匀且清晰度高的有源矩阵显示器。
