Li Yifan, Hu Jiamin, Jia Yiming, Lou Cunguang, Liu Xiuling, Yao Jianquan
College of Electronic Information Engineering & Hebei Key Laboratory of Digital Medical Engineering, Hebei University, Baoding 071000, China.
School of Precision Instruments and Opto Electronics Engineering, Tianjin University, Tianjin 300072, China.
ACS Appl Mater Interfaces. 2025 Aug 20;17(33):47197-47206. doi: 10.1021/acsami.5c09541. Epub 2025 Aug 11.
Silicon has become a leading material in photoelectric detection, owing to its distinct advantages in both response speed and photoelectric conversion efficiency. However, due to the lack of intrinsic polarization selectivity, silicon still faces major challenges in achieving polarization detection in the broadband ultraviolet (UV) to infrared (IR) range. In this paper, we have successfully developed an ultrabroadband UV-IR polarization photodetector with a Ag/CsPbBrI/Si/Ag vertical structure based on the CsPbBrI and N-type pyramid-silicon composite structure, which is designed to achieve full Stokes polarization detection. The device exhibits excellent broadband polarization response in the ultraviolet to infrared band (405-1319 nm), especially at 1064 nm, showing an anisotropy ratio of up to 72.7. By optimizing the anisotropic optical response of CsPbBrI and nanoscale pyramid silicon structures, the device achieves a fast response time of 4 μs under 1064 nm illumination at a zero bias voltage. The experimental results show that the detector has a stable and fast optical switching response and excellent polarization sensitivity in the broadband range. The maximum response reaches 270 mA/W under 1064 nm illumination at zero bias voltage, the normalized detection rate is 2.6 × 10 Jones, and the noise equivalent power is 44 pW/Hz. Through in-depth discussions, the photoelectric response mechanism at 1319 nm is attributed to the PTE effect and the heterojunction effect. In addition, the full Stokes parameter verifies the effectiveness of the device in polarization state characterization, and the single-point pixel imaging experiment further confirms its application potential in broadband polarization imaging. This study proposes a novel approach for advancing the next generation of the on-chip polarization imaging system and shows an important application prospect in the fields of safety detection, high-resolution medical imaging, and medico-industrial intersection.
硅因其在响应速度和光电转换效率方面的独特优势，已成为光电探测领域的主导材料。然而，由于缺乏本征极化选择性，硅在实现宽带紫外（UV）到红外（IR）范围内的极化探测方面仍面临重大挑战。在本文中，我们基于CsPbBrI和N型金字塔硅复合结构，成功开发了一种具有Ag/CsPbBrI/Si/Ag垂直结构的超宽带UV-IR极化光电探测器，旨在实现全斯托克斯极化探测。该器件在紫外到红外波段（405-1319nm）表现出优异的宽带极化响应，特别是在1064nm处，各向异性比高达72.7。通过优化CsPbBrI的各向异性光学响应和纳米级金字塔硅结构，该器件在零偏压下1064nm光照下实现了4μs的快速响应时间。实验结果表明，该探测器在宽带范围内具有稳定且快速的光开关响应和优异的极化灵敏度。在零偏压下1064nm光照下，最大响应达到270mA/W，归一化探测率为2.6×10琼斯，噪声等效功率为44pW/Hz。通过深入讨论，1319nm处的光电响应机制归因于PTE效应和异质结效应。此外，全斯托克斯参数验证了该器件在极化状态表征方面的有效性，单点像素成像实验进一步证实了其在宽带极化成像中的应用潜力。本研究提出了一种推进下一代片上极化成像系统的新方法，并在安全检测、高分辨率医学成像和医工交叉领域显示出重要的应用前景。
