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含外尔半金属缺陷层的一维光子晶体结构中的古斯-汉欣位移

Goos-Hänchen shift in a 1D-photonic crystal structure containing a Weyl semimetal defect layer.

作者信息

Ashenaei Akram, Jamshidi-Ghaleh Kazem, Abdi-Ghaleh Reza

出版信息

Appl Opt. 2025 Aug 1;64(22):6432-6438. doi: 10.1364/AO.568819.

DOI:10.1364/AO.568819
PMID:40792901
Abstract

This study investigates the Goos-Hänchen (GH) shift in a one-dimensional photonic crystal (1DPC) structure containing a single Weyl semimetal (WSM) layer as a defect. The proposed configuration, represented as ()(), functions as a symmetric Fabry-Perot (s-FP) interferometer. The reflection coefficient for a TM-polarized incident wave is calculated using the transfer matrix method, and the GH shift is extracted from the phase variation of the reflected wave. By analyzing the real part of the WSM's permittivity, the reflection spectrum, phase response, and GH shift are systematically examined. The results reveal that both the Fermi energy and the number of Weyl nodes () significantly influence the magnitude of the GH shift and can be tuned to control the incident angle at which the maximum displacement occurs. Specifically, as the Fermi energy increases, the magnitude of the GH shift increases; conversely, as the parameter increases, the GH shift magnitude decreases. These findings offer a promising route for the development of tunable optical devices based on the GH effect.

摘要

本研究探讨了在含有单个外尔半金属(WSM)层作为缺陷的一维光子晶体(1DPC)结构中的古斯-汉欣(GH)位移。所提出的结构表示为()(),其作用类似于对称法布里-珀罗(s-FP)干涉仪。使用传输矩阵法计算TM偏振入射波的反射系数,并从反射波的相位变化中提取GH位移。通过分析WSM介电常数的实部,系统地研究了反射光谱、相位响应和GH位移。结果表明,费米能和外尔节点数()都对GH位移的大小有显著影响,并且可以进行调谐以控制发生最大位移的入射角。具体而言,随着费米能增加,GH位移的大小增加;相反,随着参数增加,GH位移大小减小。这些发现为基于GH效应的可调谐光学器件的开发提供了一条有前景的途径。

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