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使用硅覆盖层的多层石墨烯基红外发射率调制器的增强波长选择性和稳定性。

Enhanced wavelength selectivity and stability of multilayer graphene-based infrared emissivity modulator using a silicon overlayer.

作者信息

Yang Kaiyu, Lin Tong, Ke Haibo, Cao Ying, Fu Lishi, Xian Jinghuan, Yan Xitong, Cai Weiwei, Mu Rui, Zhang Xueao, Zhang Yufeng

出版信息

Opt Express. 2025 Apr 21;33(8):17591-17600. doi: 10.1364/OE.554948.

DOI:10.1364/OE.554948
PMID:40797993
Abstract

Ion intercalation offers a versatile method for dynamically tuning the infrared emissivity of multilayer graphene (MLG), with great potential in various applications, such as radiative cooling and thermal camouflage. However, the practical use of MLG-based emissivity modulators is limited by poor wavelength selectivity and short operational lifespans. Herein, a silicon overlayer is introduced to address these challenges. By controlling the thickness of the silicon overlayer, selective wavelength emissivity across mid-wave and long-wave infrared bands is achieved through interference effects and plasmonic resonance without compromising the capability for emissivity modulation via ion intercalation through electrostatic gating. Furthermore, the silicon overlayer significantly prolongs the device's lifespan by preventing oxidation and maintaining the structural integrity of MLG. These results present an approach to integrating optical engineering with dynamic emissivity modulation, paving the way for developing practical wavelength-selective emissivity modulators.

摘要

离子插层为动态调节多层石墨烯(MLG)的红外发射率提供了一种通用方法,在辐射冷却和热伪装等各种应用中具有巨大潜力。然而,基于MLG的发射率调制器的实际应用受到波长选择性差和工作寿命短的限制。在此,引入了一层硅覆盖层来应对这些挑战。通过控制硅覆盖层的厚度,利用干涉效应和等离子体共振在中波和长波红外波段实现了选择性波长发射率,同时不影响通过静电门控进行离子插层来调制发射率的能力。此外,硅覆盖层通过防止氧化和保持MLG的结构完整性,显著延长了器件的寿命。这些结果提出了一种将光学工程与动态发射率调制相结合的方法,为开发实用的波长选择性发射率调制器铺平了道路。

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