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钨中空位-氦团簇中陷阱突变的原子机制及温度相关判据

Atomistic Mechanisms and Temperature-Dependent Criteria of Trap Mutation in Vacancy-Helium Clusters in Tungsten.

作者信息

Kong Xiang-Shan, Ran Fang-Fang, Song Chi

机构信息

State Key Laboratory of Advanced Equipment and Technology for Metal Forming, and Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061, China.

College of Science, Jinling Institute of Technology, Nanjing 211169, China.

出版信息

Materials (Basel). 2025 Jul 27;18(15):3518. doi: 10.3390/ma18153518.

Abstract

Helium (He) accumulation in tungsten-widely used as a plasma-facing material in fusion reactors-can lead to clustering, trap mutation, and eventual formation of helium bubbles, critically impacting material performance. To clarify the atomic-scale mechanisms governing this process, we conducted systematic molecular statics and molecular dynamics simulations across a wide range of vacancy cluster sizes (n = 1-27) and temperatures (500-2000 K). We identified the onset of trap mutation through abrupt increases in tungsten atomic displacement. At 0 K, the critical helium-to-vacancy (He/V) ratio required to trigger mutation was found to scale inversely with cluster size, converging to ~5.6 for large clusters. At elevated temperatures, thermal activation lowered the mutation threshold and introduced a distinct He/V stability window. Below this window, clusters tend to dissociate; above it, trap mutation occurs with near certainty. This critical He/V ratio exhibits a linear dependence on temperature and can be described by a size- and temperature-dependent empirical relation. Our results provide a quantitative framework for predicting trap mutation behavior in tungsten, offering key input for multiscale models and informing the design of radiation-resistant materials for fusion applications.

摘要

氦(He)在钨中的积累——钨在聚变反应堆中广泛用作面向等离子体的材料——会导致聚集、陷阱突变,并最终形成氦泡,严重影响材料性能。为了阐明控制这一过程的原子尺度机制,我们在广泛的空位团簇尺寸(n = 1 - 27)和温度范围(500 - 2000 K)内进行了系统的分子静力学和分子动力学模拟。我们通过钨原子位移的突然增加确定了陷阱突变的起始点。在0 K时,发现触发突变所需的临界氦与空位(He/V)比与团簇尺寸成反比,对于大团簇收敛到~5.6。在升高的温度下,热激活降低了突变阈值并引入了一个明显的He/V稳定窗口。在这个窗口以下,团簇倾向于解离;在其之上,陷阱突变几乎肯定会发生。这个临界He/V比与温度呈线性关系,可以用一个与尺寸和温度相关的经验关系来描述。我们的结果为预测钨中的陷阱突变行为提供了一个定量框架,为多尺度模型提供了关键输入,并为聚变应用的抗辐射材料设计提供了参考。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6e5a/12348472/200036ce0643/materials-18-03518-g001.jpg

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