Kwon Hoedon, Jeong Kwangsik, Seong Yeonwoo, Kwon Gihyeon, Kim Hyeon-Sik, Lim Hyeonwook, Lee Changwoo, Kim Dajung, Lee Hojun, Cho Mann-Ho
Department of Physics, Yonsei University, Seoul 03722, Republic of Korea.
Division of AI Semiconductor, Yonsei University, Wonju, Gangwon-do 26493, Republic of Korea.
ACS Appl Mater Interfaces. 2025 Sep 3;17(35):49660-49670. doi: 10.1021/acsami.5c09870. Epub 2025 Aug 21.
While Te-based ovonic threshold switching (OTS) materials offer advantages such as low-voltage operation and fast switching speed, their relatively low crystallization temperature compared to S- or Se-based counterparts results in poor thermal stability and limited electrical endurance. Various strategies, including element doping and complex composition design, have been explored to address these limitations. In this study, the OTS device properties of BTe thin films, a simple two-component system, were systematically investigated across a wide range of compositions. Electrical measurements, band structure analysis, and bonding configuration studies revealed that increasing the boron content enhanced the insulating properties in the off-state and improved the thermal stability of the films. Through composition optimization, BTe devices exhibited significantly lower off-current densities while maintaining excellent switching characteristics, outperforming previously reported Te-based OTS materials. Furthermore, detailed analysis confirmed that the unique bonding configurations and structural features associated with boron incorporation play a critical role in achieving the outperformances in BTe devices.
虽然碲基硫属化物阈值开关（OTS）材料具有低电压操作和快速开关速度等优点，但与硫或硒基同类材料相比，其相对较低的结晶温度导致热稳定性差和电耐久性有限。人们探索了各种策略，包括元素掺杂和复杂成分设计，以解决这些限制。在本研究中，系统地研究了简单二元体系BTe薄膜在广泛成分范围内的OTS器件性能。电学测量、能带结构分析和键合构型研究表明，增加硼含量可增强关态下的绝缘性能并改善薄膜的热稳定性。通过成分优化，BTe器件在保持优异开关特性的同时，展现出显著更低的关态电流密度，性能优于先前报道的碲基OTS材料。此外，详细分析证实，与硼掺入相关的独特键合构型和结构特征在BTe器件实现优异性能方面起着关键作用。
