Lai Wei-Chih, Hsu Chan-Hung, Wu Bo-Ting, Chen Po-Han, Chang Sheng-Po, Kuo Cheng-Huang, Sheu Jinn-Kong, Chang Shoou-Jinn
Department of Photonics, National Cheng Kung University, Tainan 70101, Taiwan.
Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 704, Taiwan.
ACS Omega. 2025 Aug 5;10(32):35763-35770. doi: 10.1021/acsomega.5c02540. eCollection 2025 Aug 19.
The hole carriers of spin-coated sol-gel CrO could be activated successfully by postannealing at a temperature of more than 500 °C in a vacuum without doping. The sheet hole concentration increased with the increase in the postannealing temperature and could reach 5 × 10 cm at a postannealing temperature of 680 °C. However, activating the hole carriers for annealing CrO in N ambient at a low pressure of 3 mTorr and a temperature of 560 °C or higher was difficult. The N-annealed CrO could regain the same electrical properties as vacuum-annealed CrO by annealing under vacuum again. A comparison of the deconvoluted XPS spectra of the postannealed CrO in a vacuum and in N ambient showed that the amount of Cr, Cr, Cr, Cr, and O vacancies was strongly correlated with the hole carrier creation of CrO.
旋涂溶胶 - 凝胶CrO的空穴载流子在真空中500℃以上进行后退火时可成功激活，无需掺杂。面空穴浓度随后退火温度的升高而增加，在680℃后退火温度下可达到5×10 cm 。然而，在3 mTorr的低压和560℃或更高温度的N气氛中对CrO进行退火以激活空穴载流子是困难的。通过再次在真空中退火，N退火的CrO可以恢复到与真空退火的CrO相同的电学性能。对真空中和N气氛中后退火的CrO的去卷积XPS光谱进行比较表明，Cr、Cr、Cr、Cr和O空位的数量与CrO的空穴载流子产生密切相关。
