Ma Yange, Qiu Tuquan, Zhao Zhenxiang, Zou Quan, Chen Bo, Sun Qian, Zhao Shuangliang
State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures and School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, P. R. China.
Guangxi Key Laboratory of Petrochemical Resource Processing and Process Intensification Technology, Guangxi University, Nanning 530004, P. R. China.
ACS Omega. 2025 Aug 6;10(32):35678-35688. doi: 10.1021/acsomega.5c02209. eCollection 2025 Aug 19.
CeO has been widely employed in semiconductors and ultraprecision optical polishing on account of its remarkable physical, chemical, and mechanical qualities. In this work, we present an efficient strategy to prepare monodisperse CeO nanoparticles (NPs) with tunable sizes through a solvothermal method integrated with the following in situ surface modification procedure. The as-prepared CeO NPs exhibit excellent monodispersibility and regular spherical morphology. Their average particle diameter can be readily regulated from 7.0 to 336.3 nm by adjusting the experimental conditions. Subsequently, these obtained CeO NPs can be formulated into different slurries, and their polishing performances are tested. According to the results, the CeO polishing slurry with an average particle size of 94.5 nm has a material removal rate of 481 nm/min and a surface roughness of 0.14 nm. In contrast, the commercial product has only a material removal rate of 214 nm/min and a surface roughness of 0.30 nm. Obviously, a much faster polishing rate and a smoother surface can be achieved. Furthermore, a smaller surface roughness of 0.11 nm can be realized when the average particle size of CeO is reduced to 46.9 nm, which is beneficial to the ultraprecision optical polishing process and can greatly improve the quality of the material surface.
由于其卓越的物理、化学和机械性能，CeO已被广泛应用于半导体和超精密光学抛光领域。在这项工作中，我们提出了一种有效的策略，通过溶剂热法结合以下原位表面改性程序来制备尺寸可调的单分散CeO纳米颗粒（NPs）。所制备的CeO NPs表现出优异的单分散性和规则的球形形态。通过调整实验条件，它们的平均粒径可以很容易地从7.0 nm调节到336.3 nm。随后，将这些获得的CeO NPs配制成不同的浆料，并测试它们的抛光性能。结果表明，平均粒径为94.5 nm的CeO抛光浆料的材料去除率为481 nm/min，表面粗糙度为0.14 nm。相比之下，商业产品的材料去除率仅为214 nm/min，表面粗糙度为0.30 nm。显然，可以实现更快的抛光速率和更光滑的表面。此外，当CeO的平均粒径减小到46.9 nm时，可以实现更小的表面粗糙度0.11 nm，这有利于超精密光学抛光过程，并可以大大提高材料表面的质量。
