Yao Xiaoyu, Ding Shuai, Shen Xiaoyu, Guo Congkai, Liu Yao, Xia Wenjuan, Wu Guohua, Zhang Yaohong
School of Physics, Northwest University, Xi'an 710127, China.
Qingdao Innovation and Development Center of Harbin Engineering University, Harbin Engineering University, Qingdao 266000, China.
Nanomaterials (Basel). 2025 Aug 8;15(16):1217. doi: 10.3390/nano15161217.
In order to improve the electrochromic properties of NiO films, Mg ions were introduced into NiO films using the sol-gel method and the spin-coating method. The introduction of Mg ions leads to the loose structure of the compact NiO film, which can provide more channels for the transport of OH. In addition, the introduction of Mg ions increases the oxygen vacancies and oxygen interstitial defects in the NiO film, which effectively increases the reactive sites and improves the charge transfer efficiency at the interface between the NiO film and the electrolyte. The electrochemical results further show that the film electrode (NiO-Mg2) has the largest charge storage capacity when the Mg doping concentration is 10%. Compared with the undoped NiO film, the doping of Mg improves the transmittance modulation (Δ) performance of the NiO film (Δ up to 55.8%) and shortens the response time (2.39 s/0.63 s for coloring/bleaching). In general, Mg doping is an effective method for improving the electrochromic properties of NiO films.
为了改善氧化镍(NiO)薄膜的电致变色性能,采用溶胶-凝胶法和旋涂法将镁离子引入到NiO薄膜中。镁离子的引入导致致密的NiO薄膜结构变得疏松,这可以为氢氧根(OH)的传输提供更多通道。此外,镁离子的引入增加了NiO薄膜中的氧空位和氧间隙缺陷,有效地增加了反应位点,并提高了NiO薄膜与电解质界面处的电荷转移效率。电化学结果进一步表明,当镁掺杂浓度为10%时,薄膜电极(NiO-Mg2)具有最大的电荷存储容量。与未掺杂的NiO薄膜相比,镁的掺杂提高了NiO薄膜的透过率调制(Δ)性能(Δ高达55.8%)并缩短了响应时间(着色/漂白分别为2.39秒/0.63秒)。总体而言,镁掺杂是改善NiO薄膜电致变色性能的有效方法。