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BiYIG薄膜中手性自旋失稳的观测与控制

Observation and Control of Chiral Spin Frustration in BiYIG Thin Films.

作者信息

Wang Jinlong, Wang Hanchen, Xu Zhewen, Bassant Artim L, Hu Junfeng, Song Wenjie, Li Chaozhong, Meng Xiangrui, Zhao Mengqi, Liu Song, Chai Guozhi, Gao Peng, Jiang Wanjun, Xue Desheng, Yu Dapeng, Legrand William, Degen Christian L, Duine Rembert A, Gambardella Pietro, Yu Haiming

机构信息

Beihang University, Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beijing 100191, China.

International Quantum Academy, Shenzhen 518048, China.

出版信息

Phys Rev Lett. 2025 Aug 8;135(6):066705. doi: 10.1103/wjvv-lp7n.

Abstract

Chiral interactions within magnetic layers stabilize the formation of noncollinear spin textures, which can be leveraged to design devices with tailored magnetization dynamics. Here, we introduce chiral spin frustration in which energetically degenerate magnetic states frustrate the Dzyaloshinskii-Moriya interaction. We demonstrate magnon-driven switching of the chirally frustrated spin states in Bi-substituted yttrium iron garnet thin films. These states are defined by an in-plane macrospin neighboring two out-of-plane spins on either side with opposing chirality. Using scanning nitrogen-vacancy magnetometry and spin pumping, we identified four degenerate frustrated states and achieved their controllable switching via magnon spin torque. Crucially, the switching is unidirectional, with selectivity determined by the incoming magnon direction. This mechanism provides a powerful approach to manipulate frustrated spin states with magnons. Chiral spin frustration unlocks the geometry constraints of conventional frustration, and therefore opens new horizons for frustrated magnetism, paving the way for energy-efficient spintronic devices based on frustration.

摘要

磁性层内的手性相互作用稳定了非共线自旋纹理的形成,这可用于设计具有定制磁化动力学的器件。在此,我们引入手性自旋阻挫,其中能量简并的磁态阻碍了Dzyaloshinskii-Moriya相互作用。我们展示了在铋取代的钇铁石榴石薄膜中,磁振子驱动的手性阻挫自旋态的切换。这些态由一个面内宏观自旋定义,该宏观自旋在两侧与两个具有相反手性的面外自旋相邻。利用扫描氮空位磁力测量法和自旋泵浦,我们识别出四个简并的阻挫态,并通过磁振子自旋扭矩实现了它们的可控切换。至关重要的是,这种切换是单向的,其选择性由入射磁振子的方向决定。这种机制提供了一种利用磁振子操纵阻挫自旋态的强大方法。手性自旋阻挫消除了传统阻挫的几何约束,因此为阻挫磁性开辟了新视野,为基于阻挫的节能自旋电子器件铺平了道路。

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