Anang Frank Eric Boye, Cain Markys, Xu Min, Li Zhi, Brand Uwe, Jangid Darshit, Seibert Sebastian, Schwalb Chris, Peiner Erwin
Instute of Semiconductor Technology, Technische Universität Braunschweig, 38106 Braunschweig, Germany.
Scientific Metrology Department, Ghana Standards Authority (GSA), Accra P.O. Box MB 245, Ghana.
Micromachines (Basel). 2025 Aug 12;16(8):927. doi: 10.3390/mi16080927.
In this study we report on the structural, mechanical, and electrical characterization of different structures of vertically aligned zinc oxide (ZnO) nanowires (NWs) synthesized using hydrothermal methods. By optimizing the growth conditions, scanning electron microscopy (SEM) micrographs show that the ZnO NWs could reach an astounding 51.9 ± 0.82 µm in length, 0.7 ± 0.08 µm in diameter, and 3.3 ± 2.1 µm density of the number of NWs per area within 24 h of growth time, compared with a reported value of ~26.8 µm in length for the same period. The indentation modulus of the as-grown ZnO NWs was determined using contact resonance (CR) measurements using atomic force microscopy (AFM). An indentation modulus of 122.2 ± 2.3 GPa for the NW array sample with an average diameter of ~690 nm was found to be close to the reference bulk ZnO value of 125 GPa. Furthermore, the measurement of the piezoelectric coefficient () using the traceable ESPY33 tool under cyclic compressive stress gave a value of 1.6 ± 0.4 pC/N at 0.02 N with ZnO NWs of 100 ± 10 nm and 2.69 ± 0.05 µm in diameter and length, respectively, which were embedded in an S1818 polymer. Current-voltage () measurements of the ZnO NWs fabricated on an -type silicon (Si) substrate utilizing a micromanipulator integrated with a tungsten (W) probe exhibits Ohmic behavior, revealing an important phenomenon which can be attributed to the generated electric field by the tungsten probe, dielectric residue, or conductive material.
在本研究中，我们报告了使用水热法合成的垂直排列氧化锌（ZnO）纳米线（NWs）不同结构的结构、力学和电学特性。通过优化生长条件，扫描电子显微镜（SEM）显微照片显示，在24小时的生长时间内，ZnO纳米线的长度可达惊人的51.9±0.82 µm，直径为0.7±0.08 µm，每单位面积的纳米线密度为3.3±2.1 µm，而同期报道的长度约为26.8 µm。使用原子力显微镜（AFM）的接触共振（CR）测量法测定了生长态ZnO纳米线的压痕模量。发现平均直径约为690 nm的纳米线阵列样品的压痕模量为122.2±2.3 GPa，接近参考体相ZnO值125 GPa。此外，在循环压缩应力下使用可溯源的ESPY33工具测量压电系数（），对于分别嵌入S1818聚合物中、直径为100±10 nm、长度为2.69±0.05 µm的ZnO纳米线，在0.02 N时的值为1.6±0.4 pC/N。利用集成有钨（W）探针的微操纵器在n型硅（Si）衬底上制备的ZnO纳米线的电流-电压（I-V）测量显示出欧姆行为，揭示了一个重要现象，这可归因于钨探针、介电残留物或导电材料产生的电场。
