Chu Weihong, Ma Zhuangzhuang, Zhou Qicong, Ji Xinzhen, Lin Shuailing, Xia Zhenghao, Wang Niannian, Wang Meng, Yang Dongwen, Lian Linyuan, Zhang Fei, Han Yanbing, Jia Mochen, Chen Xu, Wu Di, Zhang Jibin, Liu Ying, Li Xinjian, Shan Chongxin, Shi Zhifeng
Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China.
School of Flexible Electronics (SoFE), Henan Institute of Flexible Electronics (HIFE), Henan University, 379 Mingli Road, Zhengzhou, 450046, China.
Angew Chem Int Ed Engl. 2025 Aug 29:e202513452. doi: 10.1002/anie.202513452.
Organic-inorganic antimony (Sb) halides are garnering increasing interest for lead-free perovskite light-emitting diodes (LEDs), but the non-radiative recombination and poor charge transport are hard-treat case to restrict their electroluminescent performance. Here we developed efficient Sb halide LEDs based on the tailor-made host-guest (PhP)SbCl (PhP = tetraphenylphosphonium) emitters that enable good luminescence and charge transport properties simultaneously. Experimental and theoretical studies reveal that the self-trapped excitons triggered by excited-state structural deformation were localized in spatial-confined [SbCl] polyhedrons, generating a high photoluminescence quantum yield (96.8%). The host-guest (PhP)SbCl emitter with 35DCzPPy (3,5-bis(3-(carbazol-9-yl)phenyl) pyridine) host shows an enhanced radiative recombination, rooting in the type-I energy level configuration and efficient energy transfer between 35DCzPPy and (PhP)SbCl. The 35DCzPPy with delocalized molecular orbital enhances the electrical properties of emitters, which balances the charge transport/injection in devices. These benefits result in efficient Sb halide LEDs with a record-high luminance of 6689 cd m and external quantum efficiency of 6.47%. Moreover, large-area LEDs with an emitting area up to 900 mm were demonstrated with uniform emission. This work provides meaningful insights into reaching high-performance metal halide LEDs towards future practical applications.
有机-无机锑(Sb)卤化物在无铅钙钛矿发光二极管(LED)方面正引起越来越多的关注,但非辐射复合和较差的电荷传输是限制其电致发光性能的棘手问题。在此,我们基于量身定制的主客体(PhP)SbCl(PhP = 四苯基鏻)发光体开发了高效的Sb卤化物LED,该发光体能够同时实现良好的发光和电荷传输性能。实验和理论研究表明,由激发态结构变形触发的自陷激子局域在空间受限的[SbCl]多面体中,产生了高光致发光量子产率(96.8%)。具有35DCzPPy(3,5-双(3-(咔唑-9-基)苯基)吡啶)主体的主客体(PhP)SbCl发光体显示出增强的辐射复合,这源于I型能级结构以及35DCzPPy与(PhP)SbCl之间的高效能量转移。具有离域分子轨道的35DCzPPy增强了发光体的电学性能,从而平衡了器件中的电荷传输/注入。这些优势使得Sb卤化物LED具有高效性能,创纪录的高亮度为6689 cd m,外量子效率为6.47%。此外,还展示了发射面积高达900 mm²的大面积LED,其发光均匀。这项工作为实现面向未来实际应用的高性能金属卤化物LED提供了有意义的见解。