Hübner Julia-Maria, Freccero Riccardo, Carrillo-Cabrera Wilder, Schmidt Marcus, Schnelle Walter, Schwarz Ulrich
Faculty of Chemistry and Food Chemistry, TUD Dresden University of Technology, Dresden 01062, Germany.
Dipartimento di Chimica e Chimica Industriale, Università degli Studi di Genova, Via Dodecaneso 31, Genova I-16146, Italy.
Inorg Chem. 2025 Sep 29;64(38):19217-19226. doi: 10.1021/acs.inorgchem.5c02417. Epub 2025 Sep 13.
The compound SmGe adopts two modifications with Pearson symbols 16 (AlB-derivative) and 64 (defect α-ThSi2-type) upon synthesis at ambient pressure. Synthesis at extreme conditions grants access to the modification 32 (PuPd-type). High-pressure high-temperature treatment of prereacted element mixtures yields PuPd-type SmGe, space group with lattice parameters = 9.42813(9), = 7.56296(7), and = 9.67056(8) Å. The atomic arrangement refined from powder X-ray diffraction data is confirmed by transmission electron microscopy measurements. The crystal structure features Ge square pyramidal units. The topology of the Electron Localizability Indicator (ELI-D) supports the formation of a bicyclo[1.1.1]pentagermanide cluster composed of two- and three-bonded Ge species, resulting in an electron balance comprising excess electrons. The bonding analysis in position space further reveals the presence of polar covalent interactions between both germanium and the rare-earth metal and among the Ge atoms constituting the base of the Ge pyramidal units, pointing to a complex bonding scenario that is difficult to rationalize by electron counting rules. SmGe shows a metallic conductivity. Heat capacity and magnetization measurements indicate a 4 electron configuration and thus the trivalent state of the Sm ions. The magnetic moments of Sm in SmGe order antiferromagnetically at 20.4 K.
化合物SmGe在常压合成时会形成两种变体,其皮尔逊符号分别为16(AlB衍生物型)和64(缺陷α-ThSi₂型)。在极端条件下合成可得到变体32(PuPd型)。对预反应的元素混合物进行高压高温处理可得到PuPd型SmGe,空间群 ,晶格参数为 = 9.42813(9) Å、 = 7.56296(7) Å和 = 9.67056(8) Å。通过粉末X射线衍射数据精修得到的原子排列经透射电子显微镜测量得到证实。晶体结构具有Ge方形金字塔单元。电子定域性指标(ELI-D)的拓扑结构支持由双键和三键Ge物种组成的双环[1.1.1]戊锗烷簇的形成,从而导致包含多余电子的电子平衡。位置空间中的键合分析进一步揭示了锗与稀土金属之间以及构成Ge金字塔单元底部的Ge原子之间存在极性共价相互作用,这表明存在一种难以通过电子计数规则合理化的复杂键合情况。SmGe表现出金属导电性。热容和磁化率测量表明其具有4 电子构型,因此Sm离子处于三价态。SmGe中Sm的磁矩在20.4 K时呈反铁磁有序。