Wei Shasha, Sui Yusheng, Shi Yunlong, Chen Junrong, Dong Tianlei, Lin Rongchuan, Lin Zheqiao
College of Marine Equipment and Mechanical Engineering, Jimei University, Xiamen 361021, China.
Xiamen Nenggu Coating Technology Co., Ltd., Xiamen 361021, China.
Micromachines (Basel). 2025 Sep 8;16(9):1029. doi: 10.3390/mi16091029.
Aluminum nitride (AlN) ceramic materials have relatively low thermal conductivity and poor heat dissipation performance, and are increasingly unsuitable for high-power LED packaging. In this study, diamond films were deposited on AlN ceramic substrates by microwave plasma chemical vapor deposition (MPCVD). The effects of different process parameters on the crystal quality, surface morphology and crystal orientation of diamond films were studied, and the high thermal conductivity of diamond was used to enhance the heat dissipation ability of AlN ceramic substrates. Finally, the junction temperature and thermal resistance of LED devices packaged on AlN ceramic-diamond composite substrate, AlN ceramic substrate and aluminum substrate were tested. The experimental results show that compared with the traditional aluminum and AlN ceramic substrates, AlN ceramic-diamond composite substrates show excellent heat dissipation performance, especially under high-power conditions.
氮化铝（AlN）陶瓷材料具有相对较低的热导率和较差的散热性能，越来越不适用于高功率发光二极管（LED）封装。在本研究中，通过微波等离子体化学气相沉积（MPCVD）在AlN陶瓷衬底上沉积金刚石薄膜。研究了不同工艺参数对金刚石薄膜晶体质量、表面形貌和晶体取向的影响，并利用金刚石的高导热性来增强AlN陶瓷衬底的散热能力。最后，测试了封装在AlN陶瓷-金刚石复合衬底、AlN陶瓷衬底和铝衬底上的LED器件的结温和热阻。实验结果表明，与传统的铝和AlN陶瓷衬底相比，AlN陶瓷-金刚石复合衬底表现出优异的散热性能，尤其是在高功率条件下。
