Takiue M, Ishikawa H
Radioisotopes. 1978 Feb;27(2):74-9. doi: 10.3769/radioisotopes.27.2_74.
The quenching effect for halogenated benzenes, methanes and ethanes have been investigated. The halogen quenching was accurately measured using the internal conversion electrons emitted from 113Sn-113mIn. From the quenching constants determined by the Stern-Volmer plots with respect to various halogen quenchers, the following results have been obtained. (1) The quenching constants increase with the number of halogen substituents, so as linearly in halogenated benzenes and exponentially in halogenated methanes and ehtanes. Even the isomers of halogenides have different quenching constants. (2) There is a linearity between logarithm of the quenching constant and a polarographic half-wave reduction potential. (3) Electron excitation provides larger quenching constants than UV excitation for halogenated methames. Based on these results, the mechanism of halogen quenching have been discussed in connection with the exciplex formation.
已对卤代苯、甲烷和乙烷的猝灭效应进行了研究。利用从113Sn - 113mIn发射的内转换电子精确测量了卤素猝灭。根据针对各种卤素猝灭剂通过斯特恩 - 沃尔默图确定的猝灭常数,得到了以下结果。(1) 猝灭常数随卤素取代基的数量增加,在卤代苯中呈线性增加,在卤代甲烷和乙烷中呈指数增加。即使是卤化物的异构体也有不同的猝灭常数。(2) 猝灭常数的对数与极谱半波还原电位之间存在线性关系。(3) 对于卤代甲烷,电子激发比紫外激发提供更大的猝灭常数。基于这些结果,结合激基复合物的形成对卤素猝灭的机制进行了讨论。