通过对硼掺杂薄膜中的径迹进行火花计数来进行中子剂量测定。

Neutron dosimetry by the spark counting of tracks in boron-doped film.

作者信息

Tsuruta T, Takagaki M

出版信息

Health Phys. 1982 Nov;43(5):705-13. doi: 10.1097/00004032-198211000-00008.

DOI:10.1097/00004032-198211000-00008

Abstract

Thin cellulose nitrate films are doped with a boron compound. After thermal neutron irradiation, the films are etched in an aqueous solution of 10% NaOH, at 50 degrees C, for 1.5 hr, during which the 27 microns thick films are reduced to about 7 microns. The etch-pits caused by 10B(n, alpha)7Li reactions are punched twice at 600 V and then counted at 500 V. The ratio of the spark density to the thermal neutron fluence was found to be 1.0 X 10(-4) for a boron concentration of 1%. After due consideration of background counts, a thermal neutron dose of 0.3 mrem (3 X 10(-6) Sv) can be measured with this system.

摘要

将硝酸纤维素薄膜用硼化合物进行掺杂。热中子辐照后，薄膜在50℃的10%氢氧化钠水溶液中蚀刻1.5小时，在此期间，27微米厚的薄膜厚度减至约7微米。由10B(n,α)7Li反应产生的蚀刻坑先在600V下打孔两次，然后在500V下计数。对于硼浓度为1%的情况，发现火花密度与热中子注量率之比为1.0×10(-4)。在适当考虑本底计数后，使用该系统可测量0.3毫雷姆（3×10(-6)Sv）的热中子剂量。