Russell J, Wheldon T E, Stanton P
Department of Radiation Oncology, CRC Beatson Laboratories, Garscube Estate, Glasgow, Scotland.
Cancer Res. 1995 Nov 1;55(21):4915-21.
By subjecting radiosensitive human neuroblastoma IMR 32 cells to a regime of fractionated X-irradiation, a radioresistant variant, XRIMR 32, was obtained. Radiation resistance of XRIMR 32 cells was demonstrated by clonogenic and spheroid regrowth delay assays. The XRIMR 32 cultures were phenotypically unstable, with the resistant phenotype being lost after 3 passages in the absence of radiation-selective pressure, but a monoclonal cell line (clone F) was established that maintained its resistance over 35 passages without irradiation. Flow cytometry showed that exponentially growing IMR 32, XRIMR 32, and clone F cells all had very similar cell cycle distributions. Studies of initial DNA damage and repair, using the technique of neutral filter elution, revealed no differences between these lines. Chromosomal damage, as measured by micronucleus frequency following irradiation, was also seen to be very similar. However, studies of apoptosis following irradiation showed significantly higher levels of apoptosis in IMR 32 cells, compared to the resistant lines. This was true at all time points studied between 6 and 42 h after irradiation. p53 status was examined in the IMR 32 and clone F cells. No mutations were detected in exons 5-8 of the cDNA. Both lines showed increased p53 expression after irradiation. These data are consistent with the evolution of cellular resistance as a possible mechanism for the evolution of cellular radioresistance during protracted radiation regimes. However, the molecular mechanism responsible for the increased radioresistance remains to be discovered.
通过对放射敏感的人神经母细胞瘤IMR 32细胞进行分次X射线照射处理,获得了一种抗辐射变体XRIMR 32。通过克隆形成和球体再生长延迟试验证明了XRIMR 32细胞的辐射抗性。XRIMR 32培养物在表型上不稳定,在没有辐射选择压力的情况下传代3次后抗性表型丧失,但建立了一个单克隆细胞系(克隆F),该细胞系在未经照射的情况下传代35次仍保持其抗性。流式细胞术显示,指数生长的IMR 32、XRIMR 32和克隆F细胞的细胞周期分布非常相似。使用中性滤膜洗脱技术对初始DNA损伤和修复的研究表明,这些细胞系之间没有差异。通过照射后微核频率测量的染色体损伤也非常相似。然而,照射后凋亡的研究表明,与抗性细胞系相比,IMR 32细胞中的凋亡水平显著更高。在照射后6至42小时之间的所有时间点都是如此。对IMR 32和克隆F细胞的p53状态进行了检测。在cDNA的外显子5-8中未检测到突变。两个细胞系在照射后均显示p53表达增加。这些数据与细胞抗性的演变一致,这可能是长期辐射过程中细胞辐射抗性演变的一种机制。然而,导致辐射抗性增加的分子机制仍有待发现。