Press J L, Giorgetti C A
Rosenstiel Research Center, Brandeis University, Waltham, MA 02254-9910.
J Immunol. 1993 Aug 15;151(4):1998-2013.
Our previous studies showed that the primary and memory B cell responses to the multideterminant antigen poly-(L-Tyr, L-Glu)-poly-D,L-Ala-poly-L-Lys ((T,G)-A-L), differ. The primary response is dominated by antibodies binding side-chain epitopes; there is little antibody response to epitopes on the poly-D,L-Ala-poly-L-Lys backbone of (T,G)-A-L. In contrast, B cells producing A-L+ antibodies constitute approximately a third of the memory response to (T,G)-A-L. To determine the basis of this epitope-specific repertoire shift, we have examined the kinetics of expression of A-L+ B cells and antibodies after in vivo antigen priming and identified VH and V kappa genes used by A-L+ hybridoma antibodies derived from primary vs memory B cells. Kinetic studies, using the splenic focus assay, showed that the clonal frequency of A-L+ B cells remains low (<3% of (T,G)-A-L-specific B cells) 1 wk after Ag priming, increases (9%) by 2 wk, but does not reach the memory frequency (30%) until at least 3 wk after immunization. Molecular analyses showed that both the primary and memory A-L+ antibody responses are heterogeneous, using different VH and V kappa gene families as well as different germ-line genes within a VH gene family. Both H and L chain gene sequences showed somatic mutations in primary as well as memory antibodies. Analysis of antibody binding patterns and somatic mutations in a set of clonally related B cells that use a new germ-line VH gene in the VGAM3.8 family (VGK7, described here), showed a direct correlation between somatic mutation and change in antibody binding specificity. Our results demonstrate how somatic mutation and Ag selection play a role in the development of the memory response to a multideterminant Ag. The data are discussed in the context of the single vs dual lineage models for memory B cell generation.
我们之前的研究表明,针对多决定簇抗原聚-(L-酪氨酸,L-谷氨酸)-聚-D,L-丙氨酸-聚-L-赖氨酸((T,G)-A-L)的初始B细胞反应和记忆B细胞反应有所不同。初始反应以结合侧链表位的抗体为主;对(T,G)-A-L的聚-D,L-丙氨酸-聚-L-赖氨酸主链上的表位几乎没有抗体反应。相比之下,产生A-L+抗体的B细胞约占对(T,G)-A-L记忆反应的三分之一。为了确定这种表位特异性库转变的基础,我们研究了体内抗原致敏后A-L+ B细胞和抗体表达的动力学,并鉴定了源自初始B细胞与记忆B细胞的A-L+杂交瘤抗体所使用的VH和Vκ基因。使用脾集落测定法的动力学研究表明,抗原致敏1周后,A-L+ B细胞的克隆频率仍然很低(占(T,G)-A-L特异性B细胞的<3%),2周时增加(至9%),但直到免疫后至少3周才达到记忆频率(30%)。分子分析表明,初始和记忆A-L+抗体反应都是异质性的,使用不同的VH和Vκ基因家族以及VH基因家族内不同的种系基因。重链和轻链基因序列在初始抗体和记忆抗体中均显示有体细胞突变。对一组在VGAM3.8家族中使用新种系VH基因(本文所述的VGK7)的克隆相关B细胞中的抗体结合模式和体细胞突变进行分析,结果表明体细胞突变与抗体结合特异性的变化直接相关。我们的结果证明了体细胞突变和抗原选择如何在对多决定簇抗原的记忆反应发展中发挥作用。这些数据在记忆B细胞产生的单谱系与双谱系模型的背景下进行了讨论。