Rehberg B, Duch D S, Urban B W
Department of Anesthesiology, Cornell University Medical Center, New York, NY 10021.
Biochim Biophys Acta. 1994 Sep 14;1194(2):215-22. doi: 10.1016/0005-2736(94)90302-6.
The voltage-dependent action of the intravenous anesthetic pentobarbital on human brain sodium channels activated by batrachotoxin was examined using planar lipid bilayer methods. Fractional open time-data were fitted by Boltzmann functions to yield simple parameters characterizing the voltage-dependence of the fractional open time. Pentobarbital caused a dose-dependent reduction of the maximum fractional open time of the sodium channel and a shift of the potential of half-maximal open time towards hyperpolarized potentials, whereas the slope parameter of the Boltzmann-fits was unaffected. A statistically significant increase of the variability of these parameters was found only in the case of the maximum fractional open time, indicating a random fluctuation of pentobarbital-induced suppression of the sodium channels over time. The voltage-dependent action of pentobarbital probably results from either a pentobarbital-modification of channel activation gating and/or a modification of the pentobarbital action by the gating process itself.
使用平面脂质双分子层方法研究了静脉麻醉药戊巴比妥对由蛙毒素激活的人脑钠通道的电压依赖性作用。通过玻尔兹曼函数拟合分数开放时间数据,以产生表征分数开放时间电压依赖性的简单参数。戊巴比妥导致钠通道最大分数开放时间呈剂量依赖性降低,且半数最大开放时间的电位向超极化电位偏移,而玻尔兹曼拟合的斜率参数未受影响。仅在最大分数开放时间的情况下发现这些参数的变异性有统计学意义的增加,表明戊巴比妥诱导的钠通道抑制随时间存在随机波动。戊巴比妥的电压依赖性作用可能源于通道激活门控的戊巴比妥修饰和/或门控过程本身对戊巴比妥作用的修饰。