Elinder F, Arhem P
Nobel Institute for Neurophysiology, Karolinska Institutet, Stockholm, Sweden.
Biophys J. 1994 Jul;67(1):84-90. doi: 10.1016/S0006-3495(94)80457-6.
The gadolinium (Gd3+)-induced shift of potential dependence and modulated gating of Na and K channels were analyzed. In a previous investigation, we explained the shift in terms of pure screening (no binding) of fixed surface charges and the modulation by binding to modulatory sites on the channels. In the present paper, we have extended this model by including effects on the charge density of Gd3+ binding to the modulatory sites. From fitting the extended model to experimental data, the charge density was estimated to be -0.6 e nm-2, and the Gd(3+)-induced charge change to be +0.15 e nm-2, and the maximal scaling factor to be 7.5 for both Na and K channels. Intrinsic KD values for binding to the K and Na channels were estimated to be 140 and 380 mM, respectively. Estimations of the extracellular charge density, from primary structures of cloned channels, were found to be in agreement with estimations based on the present model. The modulatory site was suggested to be located at the cluster of negatively charged residues between the fifth transmembrane segment (S5) and the pore-forming region for both Na and K channels. These suggestions imply several testable predictions about different K channels.
分析了钆(Gd3+)诱导的电位依赖性变化以及对钠通道和钾通道门控的调节作用。在之前的一项研究中,我们根据固定表面电荷的纯屏蔽(无结合)以及与通道上调节位点的结合调节来解释这种变化。在本文中,我们通过纳入钆离子与调节位点结合对电荷密度的影响来扩展该模型。通过将扩展模型与实验数据拟合,估计电荷密度为-0.6 e nm-2,钆(3+)诱导的电荷变化为+0.15 e nm-2,钠通道和钾通道的最大缩放因子均为7.5。与钾通道和钠通道结合的内在解离常数(KD)值分别估计为140 mM和380 mM。从克隆通道的一级结构估计的细胞外电荷密度与基于本模型的估计结果一致。对于钠通道和钾通道,调节位点均被认为位于第五跨膜段(S5)和孔形成区域之间带负电荷残基的簇处。这些推测暗示了关于不同钾通道的几个可检验的预测。