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与亲代小鼠淋巴瘤L5178Y细胞相比,电离辐射在辐射敏感突变体M10细胞中造成的DNA碱基损伤更大。

Ionizing radiation causes greater DNA base damage in radiation-sensitive mutant M10 cells than in parent mouse lymphoma L5178Y cells.

作者信息

Mori T, Dizdaroglu M

机构信息

Chemical Science and Technology Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899.

出版信息

Radiat Res. 1994 Oct;140(1):85-90.

PMID:7938459
Abstract

DNA base damage in radiation-sensitive mutant M10 cells and parent mouse lymphoma L5178Y cells was studied. Cells were exposed to ionizing radiation in the dose range of 48 to 400 Gy. Chromatin was isolated from cells and analyzed by gas chromatography-mass spectrometry. Ten DNA base products were identified and quantified. A dose-dependent formation of the products was observed. The yields of products in M10 cells were up to threefold greater than in L5178Y cells. Of the products measured, formamidopyrimidines had the highest difference in their yields between the two cell lines. The greater initial DNA base damage in M10 cells may play a role in their hypersensitivity to ionizing radiation.

摘要

对辐射敏感的突变体M10细胞和其亲代小鼠淋巴瘤L5178Y细胞中的DNA碱基损伤进行了研究。细胞暴露于48至400 Gy剂量范围内的电离辐射中。从细胞中分离出染色质,并通过气相色谱-质谱联用仪进行分析。鉴定并定量了10种DNA碱基产物。观察到这些产物呈剂量依赖性形成。M10细胞中产物的产量比L5178Y细胞中高出多达三倍。在所测量的产物中,甲酰胺嘧啶在两种细胞系中的产量差异最大。M10细胞中更大的初始DNA碱基损伤可能在其对电离辐射的超敏反应中起作用。

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