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电子诱导产生的简单双链断裂和复杂双链断裂

Simple and complex double-strand breaks induced by electrons.

作者信息

Michalik V, Frankenberg D

机构信息

Centre de Biophysique Moleculaire, Orlenas, France.

出版信息

Int J Radiat Biol. 1994 Nov;66(5):467-70. doi: 10.1080/09553009414551471.

DOI:10.1080/09553009414551471
PMID:7983433
Abstract

Biophysical modelling of DNA damage based on Monte Carlo simulation of charged particle tracks allows to describe radiation induced double-strand breaks (dsb) in a quantitative and qualitative way. Experimental and calculated data suggest that in the electron energy range from 50 eV to 1 MeV dsb can be grouped in simple and complex dsb. Complex dsb are mainly produced by low energy electrons with initial energies between approximately 200 and approximately 500 eV, whereas simple dsb are preferentially induced by energy transfers < 200 eV, which produce at least two ionizations.

摘要

基于带电粒子径迹蒙特卡罗模拟的DNA损伤生物物理建模,能够以定量和定性的方式描述辐射诱导的双链断裂(dsb)。实验数据和计算数据表明,在50 eV至1 MeV的电子能量范围内,dsb可分为简单dsb和复杂dsb。复杂dsb主要由初始能量在约200 eV至约500 eV之间的低能电子产生,而简单dsb则优先由能量转移<200 eV诱导产生,这种能量转移会产生至少两次电离。

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引用本文的文献

1
Two types of double-strand breaks in electron and photon tracks and their relation to exchange-type chromosome aberrations.电子和光子径迹中的两种双链断裂及其与交换型染色体畸变的关系。
Radiat Environ Biophys. 1996 Aug;35(3):163-9. doi: 10.1007/s004110050026.