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对在单层膜下生长的硒化铅晶体进行的电子显微镜和原子力显微镜研究。

Electron and atomic force microscopic investigations of lead selenide crystals grown under monolayers.

作者信息

Yang J, Fendler J H, Jao T C, Laurion T

机构信息

Department of Chemistry, Syracuse University, New York 13244-4100.

出版信息

Microsc Res Tech. 1994 Apr 1;27(5):402-11. doi: 10.1002/jemt.1070270506.

DOI:10.1002/jemt.1070270506
PMID:8018992
Abstract

Lead selenide (PbSe) particulate films, composed of highly oriented, equilateral triangular crystals, have been in situ generated by the exposure of arachidic-acid- (AA) monolayer-coated aqueous lead nitrate [Pb(NO32] solutions to hydrogen selenide (H2Se). The AA coated PbSe films, at different stages of their growth, were transferred to solid substrates and characterized by transmission electron microscopy (TEM), electron diffraction, and atomic force microscopy (AFM). The epitaxial growth of PbSe crystals has been rationalized in terms of matching the [111] plane of crystalline PbSe and the (100) plane of the hexagonally close-packed AA monolayer. The parallel alignment of the < or = 110 > and < or = 001 > axes and the perpendicular alignment of the < or = 110 > axis to the monolayer have been suggested to be responsible for the observed formation of rod-like PbSe particles. The presence of a negatively charged monolayer has been found to be an essential requirement for the oriented growth of PbSe crystals.

摘要

由高度取向的等边三角形晶体组成的硒化铅(PbSe)颗粒膜,是通过将花生酸(AA)单层包覆的硝酸铅水溶液[Pb(NO₃)₂]暴露于硒化氢(H₂Se)中而原位生成的。在不同生长阶段的AA包覆的PbSe膜被转移到固体基板上,并通过透射电子显微镜(TEM)、电子衍射和原子力显微镜(AFM)进行表征。根据晶体PbSe的[111]面与六方密堆积AA单层的(100)面匹配,对PbSe晶体的外延生长进行了合理的解释。有人认为,<或= 110>轴和<或= 001>轴的平行排列以及<或= 110>轴与单层的垂直排列是观察到的棒状PbSe颗粒形成的原因。已发现带负电荷的单层的存在是PbSe晶体取向生长的必要条件。

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