Yannopoulos G, Zabalou S, Stamatis N, Tsamathis G
Department of Biology, University of Patras, Greece.
Genet Res. 1994 Apr;63(2):129-37. doi: 10.1017/s0016672300032237.
Analysis of the transposition behaviour of the P and hobo elements borne by the 31.1/CyL4 MRF (P), 23.5 delta/CyL4 MRF (hobo) and 23.5*/Cy MRF (hobo) strains in the progeny of dysgenic crosses with two ME laboratory strains (Berlin-k and dp b cn bw) at 25 degrees C revealed that: (a) the two ME laboratory strains affect differently the transposition rates of P and hobo elements. More precisely, P element transposition is higher in heterozygotes with dp b cn bw than in those with Berlin-k. In contrast, the transposition rate of hobo elements is higher in Berlin-k than in dp b cn bw heterozygotes. (b) Like P, hobo has the potential to transpose at high frequencies and to nonhomologous chromosomes. (c) The dysgenically inactive hobo elements of the 31.1 MRF strain transpose more frequently than the dysgenically active hobo elements of the 23.5 MRF strains in certain crosses. (d) There are insertion hot spots for P and hobo elements. For the P elements there are enough data to suggest that the insertion hot spots are different in the two EM strains. The data are discussed on the basis of the involvement of putative host factors in transposition regulation of the P and hobo elements.
对31.1/CyL4 MRF(P)、23.5 delta/CyL4 MRF(hobo)和23.5*/Cy MRF(hobo)品系携带的P和hobo元件在25摄氏度下与两个ME实验室品系(Berlin-k和dp b cn bw)进行非同源杂交产生的后代中的转座行为分析表明:(a)这两个ME实验室品系对P和hobo元件的转座率影响不同。更确切地说,与Berlin-k杂合子相比,dp b cn bw杂合子中P元件的转座率更高。相反,Berlin-k中hobo元件的转座率高于dp b cn bw杂合子。(b)与P元件一样,hobo元件有在高频下转座到非同源染色体的潜力。(c)在某些杂交中,31.1 MRF品系中无转座活性的hobo元件比23.5 MRF品系中有转座活性的hobo元件转座更频繁。(d)存在P和hobo元件的插入热点。对于P元件,有足够的数据表明两个EM品系中的插入热点不同。基于假定的宿主因子参与P和hobo元件转座调控对这些数据进行了讨论。