Cochrane J E, Skopek T R
Department of Pathology, University of North Carolina at Chapel Hill 27599-7525.
Carcinogenesis. 1994 Apr;15(4):713-7. doi: 10.1093/carcin/15.4.713.
The mutagenic potential of the epoxide metabolites of butadiene (BD) was measured at the tk and hprt loci in TK6 human lymphoblastoid cells. TK6 cells were exposed for 24 h to 0-400 microM 1,2-epoxybutene (EB), 0-800 microM 3,4-epoxy-1,2-butanediol (EBD), or 0-6 microM 1,2,3,4-diepoxybutane (DEB). Treated cells were allowed to grow for several days and then seeded in medium containing either 6-thioguanine or trifluorothymidine to select for hprt- or tk-/- mutants, respectively. All three metabolites were mutagenic at both loci, with DEB exhibiting activity at concentrations approximately 100-fold lower than EB or EBD. At the hprt locus, an induced mutation frequency of 5 x 10(-6) (approximately twice background hprt- frequency) was produced by treatment with 3.5 microM DEB, 150 microM EB and 450 microM EBD. At the tk locus, a similar increase in mutation frequency (total tk-/- frequency) was produced by treatment with 1.0 microM DEB, 100 microM EB and 350 microM EBD. Each epoxide tested was capable of inducing slow growth tk-/- mutants. This mutant phenotype, as shown previously by others, results from large alterations in the tk region which completely remove the active tk allele. In addition, Southern blot analysis revealed that approximately half of DEB-induced hprt- mutants displayed loss of wild-type hprt restriction fragments. No statistically significant increase in the fraction of hprt deletions among EB mutants was observed. The ability of DEB to induce deletions may be related to its ability to form DNA-DNA and DNA-protein cross-links.
在TK6人淋巴母细胞中,测定了丁二烯(BD)环氧化物代谢产物在tk和hprt基因座的诱变潜力。将TK6细胞暴露于0 - 400微摩尔/升的1,2 - 环氧丁烯(EB)、0 - 800微摩尔/升的3,4 - 环氧 - 1,2 - 丁二醇(EBD)或0 - 6微摩尔/升的1,2,3,4 - 二环氧丁烷(DEB)中24小时。处理后的细胞培养数天,然后接种于含有6 - 硫鸟嘌呤或三氟胸苷的培养基中,分别筛选hprt - 或tk - / - 突变体。所有三种代谢产物在两个基因座均具有诱变性,其中DEB的活性浓度比EB或EBD低约100倍。在hprt基因座,用3.5微摩尔/升DEB、150微摩尔/升EB和450微摩尔/升EBD处理可产生诱导突变频率为5×10⁻⁶(约为背景hprt - 频率的两倍)。在tk基因座,用1.0微摩尔/升DEB、100微摩尔/升EB和350微摩尔/升EBD处理可产生类似的突变频率增加(总tk - / - 频率)。所测试的每种环氧化物都能够诱导生长缓慢的tk - / - 突变体。如其他人之前所示,这种突变表型是由tk区域的大片段改变导致活性tk等位基因完全缺失所致。此外,Southern印迹分析显示,约一半的DEB诱导的hprt - 突变体表现出野生型hprt限制性片段的缺失。在EB突变体中未观察到hprt缺失比例的统计学显著增加。DEB诱导缺失的能力可能与其形成DNA - DNA和DNA - 蛋白质交联的能力有关。