Waters H L, Seetharam S, Seidman M M, Kraemer K H
Laboratory of Molecular Carcinogenesis, National Cancer Institute, Bethesda, Maryland 20892.
J Invest Dermatol. 1993 Nov;101(5):744-8. doi: 10.1111/1523-1747.ep12371686.
Patients with the variant form of xeroderma pigmentosum (XP) have clinical XP including a high frequency of skin cancer but, in contrast to the other forms of XP, have normal post-ultraviolet (UV) DNA excision repair and nearly normal post-UV survival. However, like excision repair-deficient XP cells, the XP variant cells are UV hypermutable. We used a UV-treated plasmid shuttle vector, pZ189, to examine the DNA repair defect in lymphoblastoid cells from an XP variant patient, XPPHBE, and a normal control. Plasmid repair, mutagenesis, and replication occur within transfected cells in a process dependent on the cells' repair capacity. With the XP variant cells post-UV, plasmid survival was normal with but there was an abnormally increased post-UV plasmid mutation frequency. Sequence analysis of the mutated plasmids revealed an increased frequency of plasmids with single base substitution mutations with the XP variant cells. As in earlier studies with UV mutagenesis, there was a predominance of G:C-->A:T base substitution mutations with plasmids recovered from both cell lines. The frequency of G:C-->C:G transversions was significantly higher with plasmids recovered from the XP variant cells than from normal cells. The location of mutations in the marker gene was non-random with different mutagenic hotspots found in plasmids recovered from the XP variant cells and from the normal cells. This study suggests that plasmid UV hypermutability in the presence of normal UV survival may be related to the increased UV skin cancer susceptibility of XP variant patients.
患有色素性干皮病(XP)变异型的患者有临床型XP,包括皮肤癌高发,但与其他形式的XP不同,其紫外线(UV)照射后DNA切除修复正常,UV照射后存活率也近乎正常。然而,与切除修复缺陷的XP细胞一样,XP变异细胞对UV高度易变。我们使用经UV处理的质粒穿梭载体pZ189,来检测一名XP变异患者XPPHBE和一名正常对照的淋巴母细胞中的DNA修复缺陷。质粒修复、诱变和复制在转染细胞内发生,此过程依赖于细胞的修复能力。对于UV照射后的XP变异细胞,质粒存活率正常,但UV照射后质粒突变频率异常增加。对突变质粒的序列分析显示,XP变异细胞中具有单碱基取代突变的质粒频率增加。正如早期关于UV诱变的研究一样,从两种细胞系回收的质粒中,G:C→A:T碱基取代突变占主导。从XP变异细胞回收的质粒中,G:C→C:G颠换的频率显著高于正常细胞。标记基因中的突变位置并非随机,在从XP变异细胞和正常细胞回收的质粒中发现了不同的诱变热点。这项研究表明,在UV存活率正常的情况下,质粒对UV的高度易变性可能与XP变异患者对UV诱发皮肤癌的易感性增加有关。