McHeyzer-Williams M G, McLean M J, Lalor P A, Nossal G J
Walter and Eliza Hall Institute of Medical Research, Royal Melbourne Hospital, Victoria, Australia.
J Exp Med. 1993 Jul 1;178(1):295-307. doi: 10.1084/jem.178.1.295.
The secretion of specific antibodies and the development of somatically mutated memory B cells in germinal centers are consequences of T cell-dependent challenge with the hapten (4-hydroxy-3-nitrophenyl)acetyl (NP). Using six-parameter flow cytometry and single cell molecular analysis we can directly monitor the extent of somatic hypermutation in individual responsive (isotype switched) antigen-specific B cells. The current study provides a direct quantitative assessment of recruitment into the antibody-secreting compartment on the one hand, and the germinal center pathway to memory on the other. Cellular expansion in both compartments is exponential and independent during the first week after challenge. The first evidence of somatic mutation, towards the end of the first week, was restricted to the germinal center pathway. Furthermore, germinal center cells express a significantly shorter third hypervariable region (CDR3), even when unmutated, than their antibody-secreting counterparts, suggesting a secondary selection event may occur at the bifurcation of these two pathways in vivo. By the end of the second week, the majority of mutated clones express a shorter CDR3 and affinity-increasing mutations as evidence of further selection after somatic mutation. These data provide evidence for substantial proliferation within germinal centers before the initiation of somatic mutation and the subsequent selection of a significant frequency of mutated clonotypes into the memory compartment.
特异性抗体的分泌以及生发中心体细胞突变记忆B细胞的发育是半抗原(4-羟基-3-硝基苯基)乙酰基(NP)依赖T细胞激发的结果。使用六参数流式细胞术和单细胞分子分析,我们可以直接监测单个反应性(同种型转换)抗原特异性B细胞中体细胞超突变的程度。当前的研究一方面对进入抗体分泌区室的情况进行了直接定量评估,另一方面对通向记忆的生发中心途径进行了直接定量评估。在激发后的第一周内,两个区室中的细胞扩增都是指数级的且相互独立。在第一周快结束时,体细胞突变的首个证据仅限于生发中心途径。此外,生发中心细胞即使未发生突变,其表达的第三个高变区(CDR3)也明显短于其抗体分泌对应细胞,这表明在体内这两条途径的分叉处可能发生了二次选择事件。到第二周结束时,大多数突变克隆表达较短的CDR3以及亲和力增加的突变,这是体细胞突变后进一步选择的证据。这些数据为体细胞突变开始前生发中心内的大量增殖以及随后将大量频率的突变克隆型选择进入记忆区室提供了证据。