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通过载体上清液逆转砷化镓诱导的抗体形成细胞反应抑制。II. 逆转因子的性质与鉴定。

Reversal of gallium arsenide-induced suppression of the antibody-forming cell response by vehicle supernatants. II. Nature and identification of reversing factors.

作者信息

Burns L A, Munson A E

机构信息

Department of Pharmacology and Toxicology, Medical College of Virginia, Virginia Commonwealth University, Richmond.

出版信息

J Pharmacol Exp Ther. 1993 Apr;265(1):150-8.

PMID:8474002
Abstract

Previous studies have demonstrated that several immunological events which are T cell mediated are significantly suppressed by a single exposure to gallium arsenide (GaAs). In addition, in the in vitro-generated antibody-forming cell (AFC) response supernatants from vehicle (VH) cultures were able to time-dependently reverse suppression induced by either in vivo (200 mg/kg) or in vitro (50 microM) exposure to GaAs. The present studies were designed to determine the nature and identification of the reversing factors present in VH supernatants. VH supernatants (25-100%) were able to dose-dependently reverse suppression of the AFC response (from 45% suppression to 48% enhancement of the VH response) induced by GaAs exposure (200 mg/kg). Concentration of 24-hr VH supernatants and treatment with proteinases revealed that the reversing factors were protein in nature with a molecular weight between 5,000 and 50,000 Da. This molecular weight range encompasses many of the lymphokines known to be necessary for the generation of an immune response. In antibody cultures exposed either in vivo or in vitro to VH or GaAs, HT-2 bioassay and antigen capture enzyme-linked immunosorbent assays demonstrated that GaAs exposure alters production of interleukin (IL)-2, IL-4, IL-5 and IL-6. Interestingly, the alterations in lymphokine production differed between the exposure regimes. Direct addition of IL-2 to antibody cultures resulted in a dose-dependent (6.25-50 ng/ml) reversal of GaAs-induced suppression (in vivo exposure) and was also dependent on the concentration of GaAs (50-200 mg/kg). IL-4 suppressed the VH AFC response and failed to reverse GaAs suppression.(ABSTRACT TRUNCATED AT 250 WORDS)

摘要

先前的研究表明,几种由T细胞介导的免疫事件会因单次接触砷化镓(GaAs)而受到显著抑制。此外,在体外培养的抗体形成细胞(AFC)反应中,来自载体(VH)培养物的上清液能够随时间依赖性地逆转由体内(200mg/kg)或体外(50μM)接触GaAs所诱导的抑制作用。本研究旨在确定VH上清液中存在的逆转因子的性质并对其进行鉴定。VH上清液(25%-100%)能够剂量依赖性地逆转由GaAs暴露(200mg/kg)所诱导的AFC反应抑制(从抑制55%到增强VH反应48%)。24小时VH上清液的浓度以及用蛋白酶处理表明,逆转因子本质上是蛋白质,分子量在5000到50000道尔顿之间。这个分子量范围涵盖了许多已知对免疫反应产生所必需的淋巴因子。在体内或体外暴露于VH或GaAs的抗体培养物中,HT-2生物测定和抗原捕获酶联免疫吸附测定表明,GaAs暴露会改变白细胞介素(IL)-2、IL-4、IL-5和IL-6的产生。有趣的是,不同暴露方式下淋巴因子产生的变化有所不同。将IL-2直接添加到抗体培养物中会导致剂量依赖性(6.25-50ng/ml)地逆转GaAs诱导的抑制(体内暴露),并且这也取决于GaAs的浓度(50-200mg/kg)。IL-4抑制VH AFC反应,并且未能逆转GaAs的抑制作用。(摘要截短至250字)

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