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[由于宿主细胞应激系统表达增强导致噬菌体辐射抗性的增长]

[Growth of radiation resistance in bacteriophages as a result of intensifying expression of the stress system in host cells].

作者信息

Verbenko V N, Kalinin V L

出版信息

Genetika. 1995 Dec;31(12):1630-6.

PMID:8601508
Abstract

By means of polyacrylamide gel electrophoresis (PAGE) of proteins from radiation-resistant Gamr mutants of Escherichia coli, it was shown that induction and elimination of RecA protein in these mutants are kinetically more rapid than in wild type cells, and heat-shock proteins (HSP) are hyperproduced even at a normal temperature (32 degrees C). gamma-and UV-irradiated bacteriophages were used to study the results of simultaneous enhanced expression of two stress repair systems. Radiation-resistant mutants are similar to wild type cells in their ability to reactivate phages lambda CI, phi 80 vir, and T 4D inactivated by gamma-rays and UV-light. W-reactivation of gamma-irradiated phages lambda and 80 vir is respectively 1.5 and 1.2 times higher in Gamr cells in which maximal w-reactivation was observed at wide range of doses (from 300 to 2000 Gy) whereas in wild type cells the peak of W-reactivation was registered at doses of 400 to 450 Gy. The phage lambda gamma-, irradiated upon adsorption on the cells of a radiation-resistant mutant, was two times more resistant to gamma-rays (DMF = 2 at LD10) than when irradiated upon adsorption on wild type cells. Postirradiation degradation of the phage lambda DNA, when irradiated within Gamr cells, was significantly lower than in wild type cells, and preirradiation of the cells decreased phage DNA degradation (12% in Gamr cells and 30% in wild-type cells). The role of an increased HSP level and expression of SOS-regulon in radiation resistance and possible interaction of stress systems in bacterial cells are discussed.

摘要

通过对大肠杆菌耐辐射Gamr突变体的蛋白质进行聚丙烯酰胺凝胶电泳(PAGE)分析,结果表明,这些突变体中RecA蛋白的诱导和消除在动力学上比野生型细胞更快,并且即使在正常温度(32摄氏度)下热休克蛋白(HSP)也会过量产生。使用γ射线和紫外线照射的噬菌体来研究两种应激修复系统同时增强表达的结果。耐辐射突变体在重新激活被γ射线和紫外线灭活的噬菌体λCI、φ80 vir和T 4D的能力方面与野生型细胞相似。在Gamr细胞中,γ射线照射的噬菌体λ和80 vir的W再激活分别比野生型细胞高1.5倍和1.2倍,在Gamr细胞中,在很宽的剂量范围(从300到2000 Gy)内观察到最大的W再激活,而在野生型细胞中,W再激活的峰值出现在400到450 Gy的剂量下。吸附在耐辐射突变体细胞上时受到γ射线照射的噬菌体λ,比吸附在野生型细胞上时受到γ射线照射的噬菌体对γ射线的抗性高两倍(在LD10时DMF = 2)。当在Gamr细胞内照射时,噬菌体λ DNA的辐照后降解明显低于野生型细胞,并且细胞的预辐照降低了噬菌体DNA的降解(Gamr细胞中为12%,野生型细胞中为30%)。文中讨论了HSP水平升高和SOS调节子表达在抗辐射中的作用以及细菌细胞中应激系统可能的相互作用。

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