Hoshiyama M, Kakigi R, Koyama S, Kitamura Y, Shimojo M, Watanabe S
Department of Integravtive Physiology, National Institute for Physiological Sciences, Okazaki, Japan.
Electroencephalogr Clin Neurophysiol. 1996 Mar;100(2):96-104. doi: 10.1016/0013-4694(95)00241-3.
The topography of somatosensory evoked magnetic fields (SEFs) following stimulation of the upper and lower lips was investigated in 6 normal subjects. When the lateral side of the upper lip was stimulated, P20m and its counterpart, N20m, were identified in the hemisphere contralateral to the stimulated side. The equivalent current dipoles (ECDs) of N20m-P20m were considered to be located in lip area of the primary sensory cortex (SI). Middle latency deflections (N40m-P40m, N60m-P60m, and N80m-P80m) were identified in bilateral hemispheres. Their ECDs were located in the SI in both hemispheres. Long latency deflections (P110m-N110m) were recognized in both hemispheres, and their ECDs were located inferior to the SI, in an area considered to be the secondary sensory cortex (SII). When the midline of the lip was stimulated, similar short and middle latency deflections was also identified, but SII deflections (P110m-N110m) were decreased in amplitude. When the lower lip was stimulated, the ECDs of short and middle latency deflections were located at a site in the SI inferior to or near those elicited by upper lip stimulation. The ECDs of P110m-N110m were located in an area of the SII similar to that upon stimulation of the upper lip, but their orientations were different.
在6名正常受试者中,对刺激上唇和下唇后体感诱发磁场(SEF)的地形图进行了研究。当刺激上唇外侧时,在受刺激侧对侧的半球中可识别出P20m及其对应成分N20m。N20m - P20m的等效电流偶极(ECD)被认为位于初级感觉皮层(SI)的唇部区域。在双侧半球中识别出了中潜伏期偏转(N40m - P40m、N60m - P60m和N80m - P80m)。它们的ECD位于双侧半球的SI中。在双侧半球中都识别出了长潜伏期偏转(P110m - N110m),其ECD位于SI下方,在一个被认为是次级感觉皮层(SII)的区域。当刺激唇中线时,也识别出了类似的短潜伏期和中潜伏期偏转,但SII偏转(P110m - N110m)的幅度减小。当刺激下唇时,短潜伏期和中潜伏期偏转的ECD位于SI中一个比上唇刺激所诱发的位置更低或更靠近该位置的位点。P110m - N110m的ECD位于与刺激上唇时类似的SII区域,但它们的方向不同。