Chiamvimonvat N, Pérez-García M T, Ranjan R, Marban E, Tomaselli G F
Departments of Medicine and Biochemical Engineering, Johns Hopkins University School of Medicine, Baltimore, Maryland 21205, USA.
Neuron. 1996 May;16(5):1037-47. doi: 10.1016/s0896-6273(00)80127-0.
We used serial cysteine mutagenesis to study the structure of the outer vestibule and selectivity region of the voltage-gated Na channel. The voltage dependence of Cd(2+) block enabled us to determine the locations within the electrical field of cysteine-substituted mutants in the P segments of all four domains. The fractional electrical distances of the substituted cysteines were compared with the differential sensitivity to modification by sulfhydryl-specific modifying reagents. These experiments indicate that the P segment of domain II is external, while the domain IV P segment is displaced internally, compared with the first and third domain P segments. Sulfhydryls with a steep voltage dependence for Cd(2+) block produced changes in monovalent cation selectivity; these included substitutions at the presumed selectivity filter, as well as residues in the domain IV P segment not previously recognized as determinants of selectivity. A new structural model is presented in which each of the P segments contribute unique loops that penetrate the membrane to varying depths to form the channel pore.
我们使用连续半胱氨酸诱变来研究电压门控钠通道外前庭和选择性区域的结构。Cd(2+)阻断的电压依赖性使我们能够确定所有四个结构域P段中半胱氨酸取代突变体在电场中的位置。将取代半胱氨酸的分数电距离与巯基特异性修饰试剂修饰的差异敏感性进行比较。这些实验表明,与第一和第三结构域P段相比,结构域II的P段位于外部,而结构域IV的P段向内部移位。对Cd(2+)阻断具有陡峭电压依赖性的巯基导致单价阳离子选择性发生变化;这些包括假定的选择性过滤器处的取代,以及结构域IV P段中以前未被认为是选择性决定因素的残基。提出了一种新的结构模型,其中每个P段贡献独特的环,这些环穿透膜到不同深度以形成通道孔。