Sato C, Kimura T, Shouno O, Hirota K, Matsumoto G
Electrotechnical Laboratory, Univ. of Tsukuba, Japan.
Nihon Rinsho. 1996 Mar;54(3):744-56.
On the basis of the sequence comparison of squid sodium channel SQSCl with those of other channels, we have proposed a tertiary structure model of the sodium channel where the transmembrane segments are octagonally aligned and the four linkers of S5-6 between segments S5 and S6 play a crucial role in the activation gate, voltage sensor and ion selective pore, which can slide, depending on membrane potentials, along inner walls consisting of segments S2 and S4 alternately. The proposed octagonal structure model is contrasted with that of Noda et al (Nature 320 : 188-192, 1986) and with Durrel and Guy (Biophys J 62 : 238-250, 1992). The octagonal structure model can explain the gating of activation and inactivation, the ion selectivity, and as well, the action mechanism of both tetrodotoxin (TTX) and a-scorpion toxin (ScTX), and be applied not only to the sodium channel, but also to the calcium channel, potassium channel, cGMP gated channel and further to the inwardly rectifying K channels. However Yan and Horn have discussed voltage dependent S4 movement in sodium channels from the accessibility of methanethiosulfonate (MTSET) to cystein residue which was substituted for the outermost arginine in IVS4 (Neuron 15 : 213-218, 1995), the neutralization of the arginine was revealed not to influence the activation of the channel. It suggest that the residue in the 3rd position of IVS4 is not a part of the voltage sensor located in the membrane. These result suggest that the change of the accessibility might be caused by the change of the covering of the residue rather than the movement of S4.
基于鱿鱼钠通道SQSCl与其他通道的序列比较,我们提出了钠通道的三级结构模型,其中跨膜片段呈八边形排列,S5和S6片段之间的四个S5-6连接子在激活门、电压传感器和离子选择性孔中起关键作用,它们可根据膜电位沿着由S2和S4片段交替组成的内壁滑动。所提出的八边形结构模型与野田等人(《自然》320:188 - 192, 1986)以及杜雷尔和盖伊(《生物物理杂志》62:238 - 250, 1992)的模型形成对比。该八边形结构模型能够解释激活和失活的门控、离子选择性,以及河豚毒素(TTX)和α-蝎毒素(ScTX)的作用机制,不仅适用于钠通道,还适用于钙通道、钾通道、cGMP门控通道以及内向整流钾通道。然而,严和霍恩根据甲硫基磺酸盐(MTSET)对IVS4中最外层精氨酸被半胱氨酸取代后的半胱氨酸残基的可及性,讨论了钠通道中电压依赖性的S4移动(《神经元》15:213 - 218, 1995),结果表明精氨酸的中和并不影响通道的激活。这表明IVS4第三位的残基不是位于膜中的电压传感器的一部分。这些结果表明,可及性的变化可能是由残基覆盖的变化而非S4的移动引起的。