Radchenko A N
Biofizika. 1996 May-Jun;41(3):625-35.
An assumption on nature of the gate charges and known data on gate changes mobility allow to deduce the volt-ampere characteristics of ionic channels and the same for membrane. Model research shows that the volt-ampere curve shape depends on gate charges mobility. Its reduction and the followed gate charges immobilization during membrane excitation process are expressed as the changes of volt-ampere curves. These changes might be to specify as the fast components of the inactivation process. A number critical values of the gate charges mobility are calculated which are important for the functions of memory (hysteresis) and excitation (negative resistance). The coincidence of values of biased charge in model and experiment is noted. The formulae that are drown are compared with Hodgkin-Huxley approximations.
基于门控电荷的性质假设以及门控电荷迁移率的已知数据，可以推导出离子通道和膜的伏安特性。模型研究表明，伏安曲线的形状取决于门控电荷的迁移率。在膜兴奋过程中，其降低以及随后门控电荷的固定表现为伏安曲线的变化。这些变化可具体指定为失活过程的快速成分。计算出了门控电荷迁移率的一些临界值，这些值对于记忆（滞后）和兴奋（负电阻）功能很重要。注意到模型中偏置电荷值与实验值的一致性。将推导得到的公式与霍奇金 - 赫胥黎近似进行了比较。
