Kimura T, Tomioka Y, Kuwahara H, Asamitsu A, Tamura M, Tokura Y
T. Kimura, Y. Tomioka, H. Kuwahara, A. Asamitsu, M. Tamura, Joint Research Center for Atom Technology (JRCAT), Tsukuba, 305, Japan. Y. Tokura, JRCAT, Tsukuba, 305, Japan, and Department of Applied Physics, University of Tokyo, Tokyo 113, Japan.
Science. 1996 Dec 6;274(5293):1698-701. doi: 10.1126/science.274.5293.1698.
The current-perpendicular-to-plane magnetoresistance (CPP-MR) has been investigated for the layered manganite, La2-2xSr1+2xMn2O7 (x = 0.3), which is composed of the ferromagnetic-metallic MnO2 bilayers separated by nonmagnetic insulating block layers. The CPP-MR is extremely large (10(4) percent at 50 kilo-oersted) at temperatures near above the three-dimensional ordering temperature (Tc approximately 90 kelvin) because of the field-induced coherent motion between planes of the spin-polarized electrons. Below Tc, the interplane magnetic domain boundary on the insulating block layer serves as the charge-transport barrier, but it can be removed by a low saturation field, which gives rise to the low-field tunneling MR as large as 240 percent.
已对层状锰氧化物La2-2xSr1+2xMn2O7（x = 0.3）的电流垂直于平面磁电阻（CPP-MR）进行了研究，该锰氧化物由被非磁性绝缘阻挡层隔开的铁磁金属MnO2双层组成。由于自旋极化电子平面之间的场致相干运动，在略高于三维有序温度（Tc约为90开尔文）的温度下，CPP-MR极大（在50千奥斯特时为10⁴%）。在Tc以下，绝缘阻挡层上的平面间磁畴边界充当电荷传输势垒，但它可以被低饱和场消除，这导致低场隧穿磁电阻高达240%。
