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层状锰氧化物晶体中的面间隧穿磁电阻

Interplane Tunneling Magnetoresistance in a Layered Manganite Crystal.

作者信息

Kimura T, Tomioka Y, Kuwahara H, Asamitsu A, Tamura M, Tokura Y

机构信息

T. Kimura, Y. Tomioka, H. Kuwahara, A. Asamitsu, M. Tamura, Joint Research Center for Atom Technology (JRCAT), Tsukuba, 305, Japan. Y. Tokura, JRCAT, Tsukuba, 305, Japan, and Department of Applied Physics, University of Tokyo, Tokyo 113, Japan.

出版信息

Science. 1996 Dec 6;274(5293):1698-701. doi: 10.1126/science.274.5293.1698.

Abstract

The current-perpendicular-to-plane magnetoresistance (CPP-MR) has been investigated for the layered manganite, La2-2xSr1+2xMn2O7 (x = 0.3), which is composed of the ferromagnetic-metallic MnO2 bilayers separated by nonmagnetic insulating block layers. The CPP-MR is extremely large (10(4) percent at 50 kilo-oersted) at temperatures near above the three-dimensional ordering temperature (Tc approximately 90 kelvin) because of the field-induced coherent motion between planes of the spin-polarized electrons. Below Tc, the interplane magnetic domain boundary on the insulating block layer serves as the charge-transport barrier, but it can be removed by a low saturation field, which gives rise to the low-field tunneling MR as large as 240 percent.

摘要

已对层状锰氧化物La2-2xSr1+2xMn2O7(x = 0.3)的电流垂直于平面磁电阻(CPP-MR)进行了研究,该锰氧化物由被非磁性绝缘阻挡层隔开的铁磁金属MnO2双层组成。由于自旋极化电子平面之间的场致相干运动,在略高于三维有序温度(Tc约为90开尔文)的温度下,CPP-MR极大(在50千奥斯特时为10⁴%)。在Tc以下,绝缘阻挡层上的平面间磁畴边界充当电荷传输势垒,但它可以被低饱和场消除,这导致低场隧穿磁电阻高达240%。

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