使用光化学蚀刻的n型化合物半导体的XTEM样品制备技术

XTEM sample preparation technique for n-type compound semiconductors using photochemical etching.

作者信息

Tanaka S, Fujii H, Hibino M

机构信息

Department of Electronics, Nagoya University, Japan.

出版信息

Microsc Res Tech. 1996 Nov 1;35(4):363-4. doi: 10.1002/(SICI)1097-0029(19961101)35:4<363::AID-JEMT10>3.0.CO;2-T.

DOI:10.1002/(SICI)1097-0029(19961101)35:4<363::AID-JEMT10>3.0.CO;2-T

PMID:8987033

Abstract

A sample preparation technique based on photochemical etching (PCE) is described for cross-sectional transmission electron microscopy (XTEM) of n-type compound semiconductors. XTEM samples of an InGaAsP/InP single-layer structure, prepared by using a moderately focused laser beam and Br2-methanol solution, gave high quality, damage-free XTEM images. The PCE technique is applicable to other n-type compound semiconductors.

摘要

本文描述了一种基于光化学蚀刻（PCE）的样品制备技术，用于n型化合物半导体的横截面透射电子显微镜（XTEM）分析。通过使用适度聚焦的激光束和Br2-甲醇溶液制备的InGaAsP/InP单层结构的XTEM样品，给出了高质量、无损伤的XTEM图像。PCE技术适用于其他n型化合物半导体。