McCaffrey J P
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario.
Microsc Res Tech. 1993 Feb 1;24(2):180-4. doi: 10.1002/jemt.1070240210.
A small-angle cleavage technique has been developed that produces superior transmission electron microscope (TEM) samples of semiconductors and related materials. The technique involves back-thinning the sample to approximately 100 microns, then scribing a groove on this back face at a specified small angle to a standard cleavage plane. The sample is cleaved along this scribe line followed by cleaving along the standard cleavage plane to produce a thin wedged sample. Samples prepared by this method are characterized and compared with conventional and low-angle ion milled samples. The technique is illustrated, and the characteristic geometry of the cleaved sample is explained in terms of a simplified cleavage model.
