Paz-Elizur T, Takeshita M, Livneh Z
Department of Biochemistry, Weizmann Institute of Science, Rehovot 76100, Isreal.
Biochemistry. 1997 Feb 18;36(7):1766-73. doi: 10.1021/bi9621324.
Bypass synthesis by DNA polymerase I was studied using synthetic 40-nucleotide-long gapped duplex DNAs each containing a site-specific abasic site analog, as a model system for mutagenesis associated with DNA lesions. Bypass synthesis proceeded in two general stages: a fast polymerization stage that terminated opposite the abasic site analog, followed by a slow bypass stage and polymerization down to the end of the template. The position of the 3'-terminus of the primer relative to the absic site analog did not affect bypass synthesis in the range of -1 to -5. In contrast, bypass synthesis increased with the distance of the 5'-boundary of the gap from the lesion for up to 3-fold in the range of +1 to +9. Bypass synthesis was severely inhibited by moderate concentrations of salts, and under conditions that were optimal for the synthetic activity of DNA polymerase I (100 mM K+), bypass synthesis was completely inhibited (< 0.02% bypass). Elimination of the 3'-->5' proofreading exonuclease activity of the polymerase, by using a mutant DNA polymerase, caused a dramatic 10-60-fold increase in bypass synthesis. Determination of the kinetic parameters for insertion opposite the abasic site analog revealed a strong preference for the insertion of dAMP, dictated by a lower Km and a higher kcat as compared to the other nucleotides. The rate of bypass was increased by omitting one or two dNTPs, most likely due to the facilitation of the polymerization past the lesion.
使用合成的40个核苷酸长的带缺口双链DNA(每个都含有一个位点特异性无碱基位点类似物)研究了DNA聚合酶I的旁路合成,作为与DNA损伤相关的诱变的模型系统。旁路合成分两个一般阶段进行:一个快速聚合阶段,在无碱基位点类似物相对处终止,随后是一个缓慢的旁路阶段并聚合至模板末端。引物的3'-末端相对于无碱基位点类似物的位置在-1至-5范围内不影响旁路合成。相反,旁路合成随着缺口的5'-边界与损伤的距离增加而增加,在+1至+9范围内最多增加3倍。中等浓度的盐严重抑制旁路合成,并且在对DNA聚合酶I的合成活性最佳的条件下(100 mM K +),旁路合成被完全抑制(<0.02%旁路)。通过使用突变型DNA聚合酶消除聚合酶的3'→5'校对核酸外切酶活性,导致旁路合成急剧增加10 - 60倍。测定与无碱基位点类似物相对处插入的动力学参数表明,与其他核苷酸相比,由于较低的Km和较高的kcat,强烈偏好dAMP的插入。省略一个或两个dNTP会增加旁路速率,最可能是由于促进了聚合越过损伤处。