Chern Lin J H, Lee H C, Ju C P
Department of Materials Science and Engineering, National Cheng-Kung University, Tainan, Taiwan, ROC.
Biomaterials. 1997 Jul;18(13):939-46. doi: 10.1016/s0142-9612(97)00013-6.
The effect of palladium addition on the microstructure, compressive strength, creep rate and mercury release rate of Ag2Hg3 (gamma 1) phase was evaluated. Experimental results indicated that fairly pure gamma 1 phase could be fabricated using the present trituration method. The heat treatment of gamma 1 at 90 degrees C increased porosity level, increased dimensional shrinkage, increased mercury vapour release and enhanced the formation of beta1 phase. Addition of palladium in gamma 1 slowed down the amalgamation reaction, largely suppressed the phase transition to beta1 and caused a slight shift in open circuit potential toward the anodic direction. Although the overall anodic polarization profiles did not show a significant effect of palladium, scanning electron microscopy revealed morphological differences between pure and palladium-containing gamma 1. Addition of palladium in gamma 1 also increased compressive strength, increased creep resistance, and largely reduced both mercury vapour and ion release rates. Considering overall performance, the optimal palladium content in gamma 1 seems to be in the range between 0.50 and 0.75 wt%.
评估了添加钯对Ag2Hg3(γ1)相的微观结构、抗压强度、蠕变速率和汞释放速率的影响。实验结果表明,使用目前的研磨方法可以制备出相当纯净的γ1相。γ1在90℃下进行热处理会增加孔隙率、增大尺寸收缩、增加汞蒸气释放并促进β1相的形成。在γ1中添加钯会减缓汞齐化反应,在很大程度上抑制向β1相的转变,并使开路电位向阳极方向略有偏移。尽管整体阳极极化曲线未显示出钯的显著影响,但扫描电子显微镜揭示了纯γ1和含钯γ1之间的形态差异。在γ1中添加钯还提高了抗压强度、增强了抗蠕变性,并在很大程度上降低了汞蒸气和离子释放速率。综合考虑整体性能,γ1中钯的最佳含量似乎在0.50至0.75 wt%之间。