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中国仓鼠V79细胞经低能质子(31 keV/微米)和紫外线(254纳米)照射后,次黄嘌呤磷酸核糖转移酶(Hprt)基因座及小卫星序列中的突变频率。

Mutant frequency at the Hprt locus and in minisatellite sequences in Chinese hamster V79 cells irradiated with low-energy protons (31 keV/microm) and ultraviolet light (254 nm).

作者信息

Ogheri S, Bruna V, Cera F, Favaretto S, Cherubini R, Celotti L

机构信息

Dipartimento di Biologià, Universita di Padova, Italy.

出版信息

Radiat Res. 1997 Sep;148(3):203-8.

PMID:9291350
Abstract

Ionizing radiations induce mutations which can be detected both in coding sequences (Hprt locus) by measuring the frequency of 6-thioguanine-resistant cells and in minisatellite sequences by DNA fingerprint analysis. We analyzed the effects of irradiation with low-energy protons (31 keV/pm) and, for comparison, with ultraviolet light (254 nm), for which DNA damage and repair mechanisms are better understood, on cultures of Chinese hamster V79 cells with the two methods mentioned above. The results indicate that the frequency of 6-thioguanine-resistant cells was increased significantly, although very differently, by both treatments. The analyses carried out by DNA fingerprinting with a multilocus DNA probe show that the level of induction in minisatellite sequences was higher compared to those measured at the Hprt locus after proton irradiation, but lower after treatment with ultraviolet light.

摘要

电离辐射会诱发突变,通过测量6-硫鸟嘌呤抗性细胞的频率可在编码序列(次黄嘌呤磷酸核糖转移酶基因座)中检测到这些突变,也可通过DNA指纹分析在小卫星序列中检测到。我们用上述两种方法分析了低能质子(31 keV/pm)照射以及作为对照的紫外线(254 nm)照射对中国仓鼠V79细胞培养物的影响,对于紫外线,其DNA损伤和修复机制已得到更好的了解。结果表明,两种处理均使6-硫鸟嘌呤抗性细胞的频率显著增加,尽管增加的方式差异很大。用多位点DNA探针进行的DNA指纹分析表明,与质子照射后在次黄嘌呤磷酸核糖转移酶基因座处测得的诱导水平相比,小卫星序列中的诱导水平更高,但在用紫外线处理后则较低。

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