Heyer R J, Muller R U, Finkelstein A
J Gen Physiol. 1976 Jun;67(6):731-48. doi: 10.1085/jgp.67.6.731.
At sufficiently large conductances, the voltage-dependent conductance induced in thin lipid membranes by monazomycin undergoes inactivation. This is a consequence of depletion of monazomycin from the membrane solution interface, as monazomycin crosses the membrane to the opposite (trans) side from which it was added. The flux of monazomycin is directly proportional to the monazomycin-induced conductance; at a given conductance it is independent of monazomycin concentration. We conclude that when monazomycin channels break up, some or all of the molecules making up a channel are deposited on the trans side. We present a model for the monazomycin channel: approximately five molecules, each spanning the membrane with its NH3+ on the trans side and an uncharged hydrophilic (probably sugar) group anchored to the cis side, form an aqueous channel lined by--OH groups. The voltage dependence arises from the flipping by the electrical field of molecules lying parallel to the cis surface into the "spanned state;" the subsequent aggregation of these molecules into channels is, to a first approximation, voltage independent. The channel breakup that deposits monomers on the trans side involves the collapsing of the channel in such a way that the uncharged hydrophilic groups remain in contact with the water in the channel as they close the channel from behind. We also discuss the possibility that inactivation of sodium channels in nerve involves the movement from one side of the membrane to the other of the molecules (or molecule) forming the channel.
在足够大的电导下,莫能菌素在薄脂质膜中诱导的电压依赖性电导会发生失活。这是由于莫能菌素从膜溶液界面耗尽所致,因为莫能菌素会穿过膜到达其添加侧的对侧(反侧)。莫能菌素的通量与莫能菌素诱导的电导成正比;在给定电导下,它与莫能菌素浓度无关。我们得出结论,当莫能菌素通道解体时,构成通道的一些或所有分子会沉积在反侧。我们提出了一个莫能菌素通道模型:大约五个分子,每个分子跨膜排列,其NH3+位于反侧,一个不带电荷的亲水性(可能是糖)基团锚定在顺侧,形成一个由-OH基团排列的水性通道。电压依赖性源于与顺侧表面平行的分子被电场翻转到“跨膜状态”;随后这些分子聚集成通道,在一阶近似下与电压无关。将单体沉积在反侧的通道解体涉及通道的坍塌,使得不带电荷的亲水性基团在从后面关闭通道时仍与通道中的水接触。我们还讨论了神经中钠通道失活涉及形成通道的分子(或分子)从膜的一侧移动到另一侧的可能性。